| 1 |
Tunable chiroptical response of chiral system composed of a nanorod coupled with a nanosurface
Ullah H, Qu Y, Wang TK, Wang YK, Jing ZM, Zhang ZY
Applied Surface Science, 467, 684, 2019 |
| 2 |
Critical Role of Tricyclic Bridges Including Neighboring Rings for Understanding Raman Spectra of Zeolites
Wang TK, Luo S, Tompsett GA, Timko MT, Fan W, Auerbach SM
Journal of the American Chemical Society, 141(51), 20318, 2019 |
| 3 |
Facile fabrication of superhydrophobic hybrid nanotip and nanopore arrays as surface-enhanced Raman spectroscopy substrates
Li YX, Li J, Wang TK, Zhang ZY, Bai Y, Hao CC, Feng CC, Ma YJ, Sun RG
Applied Surface Science, 443, 138, 2018 |
| 4 |
Electrically Controllable Actuators Based on Supramolecular Peptide Hydrogels
Xue B, Qin M, Wang TK, Wu JH, Luo DJ, Jiang Q, Li Y, Cao Y, Wang W
Advanced Functional Materials, 26(48), 9053, 2016 |
| 5 |
Low inversion equivalent oxide thickness and enhanced mobility in MOSFETs with chlorine plasma interface engineering
Li CC, Chang-Liao KS, Chen LT, Fu CH, Hong HZ, Li MC, Chi WF, Lu CC, Ye ZH, Wang TK
Solid-State Electronics, 101, 33, 2014 |
| 6 |
Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection
Liu LJ, Chang-Liao KS, Jian YC, Wang TK, Tsai MJ
Thin Solid Films, 533, 1, 2013 |
| 7 |
Electrical characteristics of SiGe pMOSFET devices with tantalum or titanium oxide higher-k dielectric stack
Li CC, Chang-Liao KS, Fu CH, Tzeng TH, Lu CC, Hong HZ, Chen TC, Wang TK, Tsai WF, Ai CF
Solid-State Electronics, 78, 17, 2012 |
| 8 |
Improved programming/erasing speed of charge-trapping flash device with tunneling layer formed by low temperature nitrogen-rich SiN/SiO2 stack
Chen CY, Chang-Liao KS, Ho JJ, Wang TK
Solid-State Electronics, 78, 22, 2012 |
| 9 |
Electrical characteristics of SiGe channel MOS devices with high-k/metal gate incorporated with nitrogen by plasma immersion ion implantation
Fu CH, Chang-Liao KS, Du LW, Wang TK, Tsai WF, Ai CF
Solid-State Electronics, 54(10), 1094, 2010 |
| 10 |
Improvement on programming and erasing speeds for charge-trapping flash memory device with SiGe buried channel
Liu LJ, Chang-Liao KS, Keng WC, Wang TK
Solid-State Electronics, 54(10), 1113, 2010 |
