| 1 |
Carrier mobility determination with a two-terminal'gridded' capacitor
Barthol CJ, White MH
Solid-State Electronics, 101, 122, 2014 |
| 2 |
A quantum mechanical treatment of low frequency noise in high-K NMOS transistors with ultra-thin gate dielectrics
Zhang XC, White MH
Solid-State Electronics, 78, 131, 2012 |
| 3 |
Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices
Wang G, White MH
Solid-State Electronics, 52(10), 1491, 2008 |
| 4 |
A quantum mechanical mobility model for scaled NMOS transistors with ultra-thin high-K dielectrics and metal gate electrodes
Zhang YL, White MH
Solid-State Electronics, 52(11), 1810, 2008 |
| 5 |
Quantum mechanical modeling of MOSFET gate leakage for high-k gate dielectrics
Wu HX, Zhao Y, White MH
Solid-State Electronics, 50(6), 1164, 2006 |
| 6 |
A low voltage SANOS nonvolatile semiconductor memory (NVSM) device
Zhao YJ, Wang XN, Shang HL, White MH
Solid-State Electronics, 50(9-10), 1667, 2006 |
| 7 |
An analytical retention model for SONOS nonvolatile memory devices in the excess electron state
Wang Y, White MH
Solid-State Electronics, 49(1), 97, 2005 |
| 8 |
Electron transport modeling in the inversion layers of 4H and 6H-SiC MOSFETs on implanted regions
Zeng YA, White MH, Das MK
Solid-State Electronics, 49(6), 1017, 2005 |
| 9 |
Modeling of direct tunneling current through interfacial oxide and high-K gate stacks
Zhao YJ, White MH
Solid-State Electronics, 48(10-11), 1801, 2004 |
| 10 |
A novel SONOS nonvolatile flash memory device using substrate hot-hole injection for write and gate tunneling for erase
Wang Y, Zhao Y, Khan BM, Doherty CL, Krayer JD, White MH
Solid-State Electronics, 48(10-11), 2031, 2004 |
