| 1 |
Remote hydrogen microwave plasma chemical vapor deposition from methylsilane precursors. 1. Growth mechanism and chemical structure of deposited a-SiC:H films
Wrobel AM, Walkiewicz-Pietrzykowska A, Uznanski P
Thin Solid Films, 564, 222, 2014 |
| 2 |
Remote hydrogen microwave plasma chemical vapor deposition from methylsilane precursors. 2. Surface morphology and properties of deposited a-SiC:H films
Wrobel AM, Walkiewicz-Pietrzykowska A, Uznanski P
Thin Solid Films, 564, 232, 2014 |
| 3 |
Hard a-SiC:H films formed by remote hydrogen microwave plasma chemical vapor deposition using a novel single-source precursor
Wrobel AM, Walkiewicz-Pietrzykowska A, Uznanski P, Glebocki B
Thin Solid Films, 520(24), 7100, 2012 |
| 4 |
Hard and high-temperature-resistant silicon carbonitride coatings based on N-silyl-substituted cyclodisilazane rings
Wrobel AM, Blaszczyk-Lezak I, Walkiewicz-Pietrzykowska A, Aoki T, Kulpinskic J
Journal of the Electrochemical Society, 155(4), K66, 2008 |
| 5 |
Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor: Growth mechanism and structure of resulting Si : C : N films
Blaszczyk-Lezak I, Wrobel AM, Kivitorma MPM, Vayrynen U, Tracz A
Applied Surface Science, 253(17), 7211, 2007 |
| 6 |
Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor: Physical and mechanical properties of deposited Si : C : N films
Blaszczyk-Lezak I, Wrobel AM
Applied Surface Science, 253(18), 7404, 2007 |
| 7 |
Silicon carbonitride thin-film coatings fabricated by remote hydrogen-nitrogen microwave plasma chemical vapor deposition from a single-source precursor: Growth process, structure, and properties of the coatings
Wrobel AM, Blaszczyk-Lezak I, Walkiewicz-Pietrzykowska A
Journal of Applied Polymer Science, 105(1), 122, 2007 |
| 8 |
Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 1. Growth mechanism, structure, and surface morphology of silicon carbonitride films
Blaszczyk-Lezak I, Wrobel AM, Aoki T, Nakanishi Y, Kucinska I, Tracz A
Thin Solid Films, 497(1-2), 24, 2006 |
| 9 |
Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 2. Properties of deposited silicon carbonitride films
Blaszczyk-Lezak I, Wrobel AM, Bielinski DM
Thin Solid Films, 497(1-2), 35, 2006 |
| 10 |
Silicon carbonitride films by remote hydrogen-nitrogen plasma CVD from a tetramethyldisilazane source
Wrobel AM, Blaszczyk-Lezak I, Walkiewicz-Pietrzykowska A, Bielinski DM, Aoki T, Hatanaka Y
Journal of the Electrochemical Society, 151(11), C723, 2004 |
