검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Comprehensive study of S/D engineering for 32 nm node CMOS in direct silicon bonded (DSB) technology Yasutake N, Nomachi A, Itokawa H, Morooka T, Zhang L, Fukushima T, Harakawa H, Mizushima I, Azuma A, Toyosihma Y Solid-State Electronics, 53(7), 694, 2009 |
| 2 |
A study on aggressive proximity of embedded SiGe with comprehensive source drain extension engineering for 32 nm node high-performance pMOSFET technology Okamoto H, Yasutake N, Kusunoki N, Adachi K, Itokawa H, Miyano K, Ishida T, Hokazono A, Kawanaka S, Mizushima I, Azuma A, Toyoshima Y Solid-State Electronics, 53(7), 712, 2009 |
| 3 |
Source/drain engineering for MOSFETs with embedded-Si : C technology Itokawa H, Yasutake N, Kusunoki N, Okamoto S, Aoki N, Mizushima I Applied Surface Science, 254(19), 6135, 2008 |
| 4 |
A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32 nm node and beyond Yasutake N, Azuma A, Ishida T, Ohuchi K, Aoki N, Kusunoki N, Mori S, Mizushima I, Morooka T, Kawanaka S, Toyoshima Y Solid-State Electronics, 51(11-12), 1437, 2007 |
| 5 |
Ab initio study of proton chemical shift in supercritical methanol using gas-phase approximation Yamaguchi Y, Yasutake N, Nagaoka M Journal of Physical Chemistry A, 106(2), 404, 2002 |
| 6 |
Theoretical prediction of proton chemical shift in supercritical water using gas-phase approximation Yamaguchi Y, Yasutake N, Nagaoka M Chemical Physics Letters, 340(1-2), 129, 2001 |