검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Effect of HfO2 Crystallinity on Device Characteristics and Reliability for Resistance Random Access Memory Kim JY, Yoo JH, Youn TO, Kim SJ, Kim JN, Lee SH, Joo MS, Roh JS, Park SK Electrochemical and Solid State Letters, 14(8), H337, 2011 |
| 2 |
Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2 Kim WG, Sung MG, Kim SJ, Yoo JH, Youn TO, Oh JW, Kim JN, Gyun BG, Kim TW, Kim CH, Byun JY, Kim W, Joo MS, Roh JS, Park SK Journal of the Electrochemical Society, 158(4), H417, 2011 |
| 3 |
Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide: TiO2, ZrO2, and HfO2 (vol 158, pg H417, 2011) Kim WG, Sung MG, Kim SJ, Yoo JH, Youn TO, Oh JW, Kim JN, Gyun BG, Kim TW, Kim CH, Byun JY, Kim W, Joo MS, Roh JS, Park SK Journal of the Electrochemical Society, 158(5), S12, 2011 |
| 4 |
Nanoscale-controlled spacing provides DNA microarrays with the SNP discrimination efficiency in solution phase Hong BJ, Oh SJ, Youn TO, Kwon SH, Park JW Langmuir, 21(10), 4257, 2005 |