화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Variations of solid-liquid interface in the BGO low thermal gradients Cz growth for diffuse and specular crystal side surface
Yuferev VS, Budenkova ON, Vasiliev MG, Rukolaine SA, Shlegel VN, Vasiliev YV, Zhmakin AI
Journal of Crystal Growth, 253(1-4), 383, 2003
2 Numerical study of 3D unsteady melt convection during indu strial-scale CZ Si-crystal growth
Evstratov IY, Kalaev VV, Zhmakin AI, Makarov YN, Abramov AG, Ivanov NG, Korsakov AB, Smirnov EM, Dornberger E, Virbulis J, Tomzig E, von Ammon W
Journal of Crystal Growth, 237, 1757, 2002
3 Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth
Bogdanov MV, Galyukov AO, Karpov SY, Kulik AV, Kochuguev SK, Ofengeim DK, Tsiryulnikov AV, Ramm MS, Zhmakin AI, Makarov YN
Journal of Crystal Growth, 225(2-4), 307, 2001
4 Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals
Evstratov IY, Kalaev VV, Zhmakin AI, Makarov YN, Abramov AG, Ivanov NG, Smirnov EM, Dornberger E, Virbulis J, Tomzig E, von Ammon W
Journal of Crystal Growth, 230(1-2), 22, 2001
5 Mass transport and powder source evolution in sublimation growth of SiC bulk crystals
Karpov DS, Bord OV, Karpov SY, Zhmakin AI, Ramm MS, Makarov YN
Materials Science Forum, 353-356, 37, 2001
6 Virtual reactor: A new tool for SiC bulk crystal growth study and optimization
Bogdanov MV, Bord OV, Galyukov AO, Karpov SY, Kulik AV, Kochuguev SK, Komissarov AE, Ofengeim DK, Serkov AM, Tsiryulnikov AV, Zhmakin IA, Ramm MS, Zhmakin AI, Makarov YN
Materials Science Forum, 353-356, 57, 2001
7 Modeling analysis of SiCCVD in a planetary reactor
Vorob'ev AN, Semennikov AK, Zhmakin AI, Makarov YN, Dauelsberg M, Wischmeyer F, Heuken M, Jurgensen H
Materials Science Forum, 353-356, 103, 2001
8 Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide
Vorob'ev AN, Karpov SY, Zhmakin AI, Lovtsus AA, Makarov YN, Krishnan A
Journal of Crystal Growth, 211(1-4), 343, 2000