검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SIC by hydride vapor phase epitaxy Polyakov AY, Govorkov AV, Smirnov NB, Nikolaev AE, Nikitina IP, Dmitriev VA Solid-State Electronics, 45(2), 249, 2001 |
| 2 |
Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire Polyakov AY, Smirnov NB, Govorkov AV, Usikov AS, Shmidt NM, Lundin WV Solid-State Electronics, 45(2), 255, 2001 |
| 3 |
Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates Polyakov AY, Govorkov AV, Smirnov NB, Nikolaev AE, Nikitina IP, Dmitriev VA Solid-State Electronics, 45(2), 261, 2001 |
| 4 |
Investigation of 3C-SiC epitaxial layers grown by sublimation epitaxy Davydov DV, Lebedev AA, Tregubova AS, Kozlovski VV, Kuznetsov AN, Bogdanova EV Materials Science Forum, 338-3, 221, 2000 |
| 5 |
Deep centres appearing in 6H and 4H SiC after proton irradiation Lebedev AA, Davydov DV, Strel'chuk AM, Kuznetsov AN, Bogdanova EV, Kozlovski VV, Savkina NS Materials Science Forum, 338-3, 973, 2000 |
| 6 |
Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors Polyakov AY, Smirnov NB, Govorkov AV, Zhang AP, Ren F, Pearton SJ, Chyi JI, Nee TE, Chuo CC, Lee CM Solid-State Electronics, 44(9), 1549, 2000 |