검색결과 : 62건
| No. | Article |
|---|---|
| 1 |
Density-functional theory study of stability and subgap states of crystalline and amorphous Zn-Sn-O Korner W, Elsasser C Thin Solid Films, 555, 81, 2014 |
| 2 |
Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence Yang C, Lee S, Shin KW, Oh S, Moon D, Kim SD, Kim YW, Kim CZ, Park WK, Choi WJ, Park J, Yoon E Journal of Crystal Growth, 370, 168, 2013 |
| 3 |
Influence of deep level defects on the performance of crystalline silicon solar cells: Experimental and simulation study Ali A, Gouveas T, Hasan MA, Zaidi SH, Asghar M Solar Energy Materials and Solar Cells, 95(10), 2805, 2011 |
| 4 |
On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process Pincik E, Kobayashi H, Rusnak J, Kim WB, Brunner R, Malinovsky L, Matsumoto T, Imamura K, Jergel M, Takahashi M, Higashi Y, Kucera M, Mikula M Applied Surface Science, 256(19), 5757, 2010 |
| 5 |
Study of n(+) type porous GaAs by photoluminescence spectroscopy: Effect of the etching time on the deep levels Abdellaoui T, Daoudi M, Bardaoui A, Chtourou R Applied Surface Science, 256(20), 5946, 2010 |
| 6 |
Self-Consistent Technique for Extracting Density of States in Amorphous InGaZnO Thin Film Transistors Park JH, Jeon K, Lee S, Kim S, Kim S, Song I, Park J, Park Y, Kim CJ, Kim DM, Kim DH Journal of the Electrochemical Society, 157(3), H272, 2010 |
| 7 |
Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes Kim HY, Kim J, Ren F, Jang S Journal of Vacuum Science & Technology B, 28(1), 27, 2010 |
| 8 |
Electrical properties of nitrogen-doped Float-Zoned silicon annealed in a range of 200 to 900 degrees C Voronkova GI, Batunina AV, Voronkov VV, Falster R, Golovina VN, Guliaeva AS, Tiurina NB Thin Solid Films, 518(9), 2350, 2010 |
| 9 |
Self-Annealing in Neutron-Irradiated AlGaN/GaN High Electron Mobility Transistors Kim HY, Ren F, Pearton SJ, Kim JY Electrochemical and Solid State Letters, 12(5), H173, 2009 |
| 10 |
Deep levels and compensation effects in sulfur-doped GaPN layers grown by organometallic vapor phase epitaxy Basile AF, Hatakenaka S, Okada H, Wakahara A Journal of Vacuum Science & Technology A, 27(3), 531, 2009 |