검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation Nicoletti T, dos Santos SD, Martino JA, Aoulaiche M, Veloso A, Jurczak M, Simoen E, Claeys C Solid-State Electronics, 91, 53, 2014 |
| 2 |
Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics dos Santos SD, Cretu B, Strobel V, Routoure JM, Carin R, Martino JA, Aoulaiche M, Jurczak M, Simoen E, Claeys C Solid-State Electronics, 97, 14, 2014 |
| 3 |
Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications Sasaki KRA, Nicoletti T, Almeida LM, dos Santos SD, Nissimoff A, Aoulaiche M, Simoen E, Claeys C, Martino JA Solid-State Electronics, 97, 30, 2014 |