| 1 |
Interface analysis on MOVPE grown InP-GaInAs-InP double heterostructures for application in infrared solar cells
Dobrich A, Schwarzburg K, Hannappel T
Solar Energy Materials and Solar Cells, 148, 25, 2016 |
| 2 |
Fundamental limits of MWIR HgCdTe barrier detectors operating under non-equilibrium mode
Kopytko M, Jozwikowski K, Rogalski A
Solid-State Electronics, 100, 20, 2014 |
| 3 |
Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs
Tao NG, Liu HG, Bolognesi CR
Solid-State Electronics, 51(6), 995, 2007 |
| 4 |
Photoluminescence properties of Si/beta-FeSi2/Si double heterostructure
Akiyama K, Kaneko S, Hirabayashi Y, Funakubo H
Thin Solid Films, 508(1-2), 380, 2006 |
| 5 |
Low-frequency noise characteristics of metamorphic In0.52Al0.48As/In0.60Ga0.40As double-heterostructure pseudomorphic high electron mobility transistors grown on a GaAs substrate
Kim JH, Yoon HS, Lee JH, Chang WJ, Shim JY, Lee KH, Song JI
Solid-State Electronics, 46(1), 69, 2002 |
| 6 |
High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD
Lane B, Razeghi M
Journal of Crystal Growth, 221, 679, 2000 |
| 7 |
Electroluminescent device with biphenylpyrazine derivative Eu salt LB (Langmuir-Blodgett) film as a molecular-size emissive layer
Era M, Tsutsui T, Takehara K, Isomura K, Taniguchi H
Thin Solid Films, 363(1-2), 229, 2000 |
| 8 |
ZnSxSe1-x heteroepitaxial growth on GaP by metalorganic vapor phase epitaxy
Lee MK, Hong CW, Wei SJ, Chang YR
Thin Solid Films, 339(1-2), 1, 1999 |
| 9 |
Nitride-Based Semiconductors for Blue and Green Light-Emitting Devices
Ponce FA, Bour DP
Nature, 386(6623), 351, 1997 |
| 10 |
Design of Organic Electroluminescent Materials and Devices
Saito S, Tsutsui T, Era M, Takada N, Aminaka EI, Wakimoto T
Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals, 252, 417, 1994 |
