| 1 |
An interpretation for high growth rates in electroepitaxial growth of GaAs under magnetic field
Youdelis WV, Dost S
Journal of Crystal Growth, 307(1), 203, 2007 |
| 2 |
A model for epitaxial lateral overgrowth of GaAs by liquid-phase electroepitaxy
Liu YC, Zytkiewicz ZR, Dost S
Journal of Crystal Growth, 265(3-4), 341, 2004 |
| 3 |
Liquid-phase electroepitaxial growth of low band-gap p-InAsPSb/n-InAs and p-InAsP/n-InAs diode heterostructures for thermo-photovoltaic application
Gevorkyan VA, Aroutiounian VM, Gambaryan KM, Kazaryan MS, Touryan KJ, Wanlass MW
Thin Solid Films, 451-52, 124, 2004 |
| 4 |
Growth of bulk single crystals under applied magnetic field by liquid phase electroepitaxy
Sheibani H, Dost S, Sakai S, Lent B
Journal of Crystal Growth, 258(3-4), 283, 2003 |
| 5 |
A numerical simulation study for the effect of applied magnetic field in liquid phase electroepitaxy
Dost S, Liu Y, Lent B
Journal of Crystal Growth, 240(1-2), 39, 2002 |
| 6 |
The effect of applied magnetic field on flow structures in liquid phase electroepitaxy - a three-dimensional simulation model
Liu YC, Okano Y, Dost S
Journal of Crystal Growth, 244(1), 12, 2002 |
| 7 |
A Model for Convective Mass-Transport in Liquid-Phase Epitaxial-Growth of Semiconductors
Dost S, Qin Z, Kimura M
International Journal of Heat and Mass Transfer, 40(13), 3039, 1997 |
