검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al(2)O3 surface passivation Asif M, Chen C, Peng D, Xi W, Zhi J Solid-State Electronics, 142, 36, 2018 |
| 2 |
ALD Al2O3 passivation of L-g=100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates Sun B, Chang HD, Wang SK, Niu JB, Liu HG Solid-State Electronics, 138, 40, 2017 |
| 3 |
Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance Ding P, Chen C, Ding WC, Yang F, Su YB, Wang DH, Jin Z Solid-State Electronics, 123, 1, 2016 |
| 4 |
Step-by-step implementation of an amplifier circuit with a graphene field-effect transistor on a printed-circuit board Lee J, Lee J, Seo DH, Shin H, Park S, Chung HJ Current Applied Physics, 14(8), 1057, 2014 |
| 5 |
High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack Lim TC, Rozeau O, Buj C, Paccaud M, Lepilliet S, Dambrine G, Danneville F Solid-State Electronics, 53(4), 433, 2009 |
| 6 |
Transit times of SiGe : C HBTs using nonselective base epitaxy Zerounian N, Rodriguez M, Enciso M, Aniel F, Chevalier P, Martinet B, Chantre A Solid-State Electronics, 48(10-11), 1993, 2004 |
| 7 |
Development and demonstration of high-power X-band SiC MESFETs Chang HR, Hanna E, Hacker J, Hackett R, Bui C Materials Science Forum, 389-3, 1367, 2002 |
| 8 |
Characterization of SiC MESFETs on conducting substrates Nilsson PA, Saroukhan AM, Svedberg JO, Konstantinov A, Karlsson S, Adas C, Gustafsson U, Harris C, Rorsman N, Eriksson J, Zirath H Materials Science Forum, 338-3, 1255, 2000 |