검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Phosphorylation of rat brain purified mitochondrial Voltage-Dependent Anion Channel by c-Jun N-terminal kinase-3 modifies open-channel noise Gupta R Biochemical and Biophysical Research Communications, 490(4), 1221, 2017 |
| 2 |
Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs Agarwal H, Kushwaha P, Gupta C, Khandelwal S, Hu CM, Chauhan YS Solid-State Electronics, 115, 33, 2016 |
| 3 |
Using dual plasma treatment to improve electrical characteristics and reduce flicker noise of high-kappa HfO2 LTPS-TFTs Chang KM, Huang BW, Wu CH, Deng IC, Chang TC, Lin SC Solid-State Electronics, 111, 7, 2015 |
| 4 |
Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics dos Santos SD, Cretu B, Strobel V, Routoure JM, Carin R, Martino JA, Aoulaiche M, Jurczak M, Simoen E, Claeys C Solid-State Electronics, 97, 14, 2014 |
| 5 |
Analytical modeling of flicker noise in DG-FinFETs with multi-layered nitrided high-kappa gate dielectric Pandit S, Sarkar CK Solid-State Electronics, 85, 54, 2013 |
| 6 |
Electrical properties and noise characterization of HfO2 gate dielectrics on strained SiGe layers Mallik S, Mukherjee C, Mahata C, Hota MK, Das T, Dalapati GK, Gao H, Kumar MK, Chi DZ, Sarkar CK, Maiti CK Thin Solid Films, 522, 267, 2012 |
| 7 |
Low Frequency Noise Analysis of Top-Gate MgZnO Thin-Film Transistor with High-kappa ZrO2 Gate Insulator Chiu HC, Wang HC, Lin CK, Chiu CW, Fu JS, Hsueh KP, Chien FT Electrochemical and Solid State Letters, 14(9), H385, 2011 |
| 8 |
Analytical modeling of flicker and thermal noise in n-channel DG FinFETs Pandit S, Syamal B, Sarkar CK Solid-State Electronics, 63(1), 177, 2011 |
| 9 |
Flicker Noises of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Lee CT, Huang LH, Chiou YL Journal of the Electrochemical Society, 157(7), H734, 2010 |
| 10 |
STI-to-gate distance effects on flicker noise characteristics in 0.13 mu m CMOS Chan CY, Huang YC, Chen JW, Hsu SSH, Juang YZ Solid-State Electronics, 52(8), 1182, 2008 |