검색결과 : 514건
| No. | Article |
|---|---|
| 1 |
Design and optimization ofGaN-based betavoltaic cell for enhanced output power density Yoon YJ, Lee JS, Kang IM, Lee JH, Kim DS International Journal of Energy Research, 45(1), 799, 2021 |
| 2 |
pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption Wang JN, Zhang X, Li H, Wang C, Li HR, Keller S, Mishra UK, Nener BD, Parish G, Atkin R Journal of Colloid and Interface Science, 583, 331, 2021 |
| 3 |
Surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires Kierdaszuk J, Tokarczyk M, Czajkowski KM, Bozek R, Krajewska A, Przewloka A, Kaszub W, Sobanska M, Zytkiewicz ZR, Kowalski G, Antosiewicz TJ, Kaminska M, Wysmolek A, Drabinska A Applied Surface Science, 475, 559, 2019 |
| 4 |
Attachable freezing-delayed surfaces for ultraviolet sensing using GaN photodetector at low temperature in air So H, Park W Applied Surface Science, 473, 261, 2019 |
| 5 |
Electronic and optical properties of van der Waals heterostructures of g-GaN and transition metal dichalcogenides Cui Z, Ren K, Zhao YM, Wang X, Shu HB, Yu J, Tang WC, Sun ML Applied Surface Science, 492, 513, 2019 |
| 6 |
Investigation of nickel-63 radioisotope-powered GaN betavoltaic nuclear battery Aydin S, Kam E International Journal of Energy Research, 43(14), 8725, 2019 |
| 7 |
High molecular weight block copolymer lithography for nanofabrication of hard mask and photonic nanostructures Rasappa S, Hulkkonen H, Schulte L, Ndoni S, Reuna J, Salminen T, Niemi T Journal of Colloid and Interface Science, 534, 420, 2019 |
| 8 |
Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE Turski H, Feduniewicz-Zmuda A, Sawicka M, Reszka A, Kowalski B, Krysko M, Wolny P, Smalc-Koziorowska J, Siekacz M, Muziol G, Nowakowski-Szukudlarek K, Grzanka S, Skierbiszewski C Journal of Crystal Growth, 512, 208, 2019 |
| 9 |
High germanium doping of GaN films by ammonia molecular beam epitaxy Fireman MN, L'Heureux G, Wu F, Mates T, Young EC, Speck JS Journal of Crystal Growth, 508, 19, 2019 |
| 10 |
Physical properties of Ga-Fe-N system relevant for crystallization of GaN - Initial studies Sadovyi B, Sadovyi P, Petrusha I, Dziecielewski I, Porowski S, Turkevich V, Nikolenko A, Tsykaniuk B, Strelchuk V, Grzegory I Journal of Crystal Growth, 507, 77, 2019 |