화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Light triggered 4H-SiC thyristors with an etched guard ring assisted JTE
Dheilly N, Planson D, Pagues G, Scharnholz S
Solid-State Electronics, 73, 32, 2012
2 Edge termination of SiC Schottky diodes with guard rings formed by high energy Boron implantation
Vassilevski K, Horsfall AB, Johnson CM, Wright NG
Materials Science Forum, 457-460, 989, 2004
3 Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes
Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG, Gwilliam RM
Materials Science Forum, 389-3, 1149, 2002
4 Fabrication and simulation of 4H-SiC PiN diodes having mesa guard ring edge termination
Sankin I, Dufrene JB, Merrett JN, Casady JB
Materials Science Forum, 433-4, 879, 2002
5 Simulation and fabrication of high-voltage 4H-SiC diodes with multiple floating guard ring termination
Sheridan DC, Niu G, Merrett JN, Cressler JD, Ellis C, Tin CC, Siergiej RR
Materials Science Forum, 338-3, 1339, 2000
6 Fabrication and characterization of 4H-SiC GTOs and diodes
Fursin L, Tone K, Alexandrov P, Luo Y, Cao L, Zhao J, Weiner M, Pan M
Materials Science Forum, 338-3, 1399, 2000
7 Design and fabrication of planar guard ring termination for high-voltage SiC diodes
Sheridan DC, Niu GF, Merrett JN, Cressler JD, Ellis C, Tin CC
Solid-State Electronics, 44(8), 1367, 2000