검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
A step-by-step experiment of 3C-SiC hetero-epitaxial growth on 4H-SiC by CVD Xin B, Jia RX, Hu JC, Tsai CY, Lin HH, Zhang YM Applied Surface Science, 357, 985, 2015 |
| 2 |
Low threading dislocation Ge on Si by combining deposition and etching Yamamoto Y, Kozlowski G, Zaumseil P, Tillack B Thin Solid Films, 520(8), 3216, 2012 |
| 3 |
Study of microstructure deflections and film/substrate curvature under generalized stress fields and mechanical properties Camarda M, Anzalone R, La Magna A, La Via F Thin Solid Films, 522, 26, 2012 |
| 4 |
Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si Kobayashi S, Nishi Y, Saraswat KC Thin Solid Films, 518, S136, 2010 |
| 5 |
The geometry of Bi nanolines on Si(001) Miwa RH, MacLeod JM, Srivastava GP, McLean AB Applied Surface Science, 244(1-4), 157, 2005 |
| 6 |
Suppression of the twin formation in CVD growth of (111) 3C-SiC on (110) Si substrate Nishiguchi T, Nakamura M, Nishio K, Isshiki T, Ohshima S, Nishino S Materials Science Forum, 483, 193, 2005 |
| 7 |
Low-temperature growth of AlN on nearly lattice-matched MnO substrates Ito S, Fujioka H, Ohta J, Sasaki A, Liu J, Yoshimoto M, Koinuma H, Oshima M Applied Surface Science, 216(1-4), 508, 2003 |
| 8 |
Kinetic phase diagram for terrace and step nucleation of CaF/Si(111) Wollschlager J, Bierkandt M, Larsson MI Applied Surface Science, 219(1-2), 107, 2003 |
| 9 |
Crystal growth of aluminum nitride by sublimation close space technique Furusho T, Ohshima S, Nishino S Materials Science Forum, 389-3, 1449, 2002 |
| 10 |
Properties of free-standing 3C-SiC monocrystals grown on undulant-Si(001) substrate Nagasawa H, Yagi K, Kawahara T, Hatta N Materials Science Forum, 433-4, 3, 2002 |