검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Investigation of metal-insulator-semiconductor diode with alpha-Ga2O3 insulating layer by liquid phase deposition Hsieh YS, Li CY, Lin CM, Wang NF, Li JV, Houng MP Thin Solid Films, 685, 414, 2019 |
| 2 |
The fabrication of the ultra-thin polyvinylidene fluoride dielectric films for nanoscale high energy density capacitors Xie X, Zhou MB, Lv LQ, Liu SY, Shen J Polymer, 132, 193, 2017 |
| 3 |
High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications Zhou Q, Yang S, Chen WJ, Zhang B, Feng ZH, Cai SJ, Chen KJ Solid-State Electronics, 91, 19, 2014 |
| 4 |
Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with f(max) of 305 GHz Jin Z, Su Y, Cheng W, Liu X, Xu A, Qi M Solid-State Electronics, 52(11), 1825, 2008 |
| 5 |
On the high-performance n(+)-GaAs/p(+)-InGaP/n-GaAs high-barrier gate camel-like HFETs Wang CK, Yu KH, Chiou WH, Chen CY, Chuang HM, Liu WC Solid-State Electronics, 47(1), 19, 2003 |
| 6 |
An effective high-voltage termination for SiC planar pn junctions for use in high-voltage devices and UV detectors Brezeanu G, Badila M, Godignon P, Millan J, Udrea F, Mihaila A, Amaratunga G Materials Science Forum, 389-3, 1301, 2002 |
| 7 |
High breakdown M-I-M structures on bulk AlN Luo B, Johnson JW, Kryliouk O, Ren F, Pearton SJ, Chu SNG, Nikolaev AE, Melnik YV, Dmitriev VA, Anderson TJ Solid-State Electronics, 46(4), 573, 2002 |
| 8 |
Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic Lin KW, Yu KH, Chang WL, Cheng CC, Lin KP, Yen CH, Lour WS, Liu WC Solid-State Electronics, 45(2), 309, 2001 |
| 9 |
Vertical AlGaAs/GaAs heterojunction bipolar transistors with 106 V breakdown Baca AG, Chang PC, Klem JF, Ashby CIH, Martin DC Solid-State Electronics, 45(5), 721, 2001 |