| 1 |
On the extraction of the external drain and source resistors and effective channel length in Si-MOSFET
Joodaki M
Solid-State Electronics, 111, 1, 2015 |
| 2 |
All regimes mobility extraction using split C-V technique enhanced with charge-sheet model
Hubert Q, Carmona M, Rebuffat B, Innocenti J, Masson P, Masoero L, Julien F, Lopez L, Chiquet P
Solid-State Electronics, 111, 52, 2015 |
| 3 |
Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistance
Karsenty A, Chelly A
Solid-State Electronics, 91, 28, 2014 |
| 4 |
Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm
Najmzadeh M, Berthome M, Sallese JM, Grabinski W, Ionescu AM
Solid-State Electronics, 98, 55, 2014 |
| 5 |
Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET
Cathignol A, Bordez S, Cros A, Rochereau K, Ghibaudo G
Solid-State Electronics, 53(2), 127, 2009 |
| 6 |
An extended drain current conductance extraction method and its application to DRAM support and array devices
Joodaki M
Solid-State Electronics, 53(9), 1020, 2009 |
| 7 |
Electrophoretic Extraction of Cells/Particles in a Counter Current Extractor
Chethana S, Patil G, Madhusudhan MC, Raghavarao KSMS
Separation Science and Technology, 43(14), 3583, 2008 |
| 8 |
Experimental evidence and extraction of the electron mass variation in [110] uniaxially strained MOSFETs
Rochette F, Casse M, Mouis M, Reimbold G, Blachier D, Leroux C, Guillaumot B, Boulanger F
Solid-State Electronics, 51(11-12), 1458, 2007 |
| 9 |
Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique
Chaisantikulwat W, Mouis M, Ghibaudo G, Cristoloveanu S, Widiez J, Vinet M, Deleonibus S
Solid-State Electronics, 51(11-12), 1494, 2007 |
| 10 |
On the extraction of the channel current in permeable gate oxide MOSFETs
Palestri P, Esseni D, Guegan G
Solid-State Electronics, 48(4), 609, 2004 |
