검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Growth of cubic SiC single crystals by the physical vapor transport technique Semmelroth K, Krieger M, Pensl G, Nagasawa H, Puesche R, Hundhausen M, Ley L, Nerding M, Strunk HP Journal of Crystal Growth, 308(2), 241, 2007 |
| 2 |
Free growth of 4H-SiC by sublimation method Dedulle JM, Anikin M, Pons M, Blanquet E, Pisch A, Madar R, Bernard C Materials Science Forum, 457-460, 71, 2004 |
| 3 |
Microstructure of cubic SiC grown by the modified Lely-method Nerding M, Semmelroth K, Pensl G, Nagasawa H, Strunk HP Materials Science Forum, 457-460, 147, 2004 |
| 4 |
Growth of 3C-SiC bulk material by the modified Lely method Semmelroth K, Krieger M, Pensl G, Nagasawa H, Pusche R, Hundhausen M, Ley L, Nerding M, Strunk HP Materials Science Forum, 457-460, 151, 2004 |
| 5 |
Model for macroscopic slits in 6H-and 4H-SiC single crystals Wollweber J, Rost HJ, Schulz D, Siche D Materials Science Forum, 389-3, 63, 2002 |
| 6 |
Characterization of inclusions in SiC bulk crystals grown by modified Lely method Hirose F, Kitou Y, Oyanagi N, Kato T, Nishizawa S, Arai K Materials Science Forum, 389-3, 75, 2002 |
| 7 |
A method of reducing micropipes in thin films by using sublimation growth Oyanagi N, Nishizawa S, Arai K Materials Science Forum, 389-3, 107, 2002 |
| 8 |
Dislocation constraint by etch-back process of seed crystal in SiC bulk crystal growth Kato T, Oyanagi N, Kitou Y, Nishizawa S, Arai K Materials Science Forum, 389-3, 111, 2002 |
| 9 |
Growth of phosphorus-doped 6H-SiC single crystals by the modified Lely method Semmelroth K, Schmid F, Karg D, Pensl G, Maier M, Greulich-Weber S, Spaeth JM Materials Science Forum, 433-4, 63, 2002 |
| 10 |
Defect reduction in SiC crystals grown by the modified Lely method Anikin MM, Pons M, Pernot E, Madar R Materials Science Forum, 433-4, 83, 2002 |