| 1 |
N형 양면 수광 태양전지를 위한 레이저 공정의 후면 패시베이션 적층 구조 영향성
김기륜, 장효식
Korean Journal of Materials Research, 30(5), 262, 2020 |
| 2 |
Predictive simulation framework for boron diffused p(+) layer optimization: Sensitivity analysis of boron tube diffusion process parameters of industrial n-type silicon wafer solar cells
Li MJ, Wong J, Wang EC, Rodriguez J, Duttagupta S, Samudra G, Aberle AG, Stangl R
Solar Energy Materials and Solar Cells, 189, 63, 2019 |
| 3 |
High efficiency screen-printed n-type silicon solar cell using co-diffusion of APCVD boron emitter and POCl3 back surface field
Ryu K, Madani K, Rohatgi A, Ok YW
Current Applied Physics, 18(2), 231, 2018 |
| 4 |
Ion-implanted and screen-printed large area 20% efficient N-type front junction Si solar cells
Ok YW, Upadhyaya AD, Tao YG, Zimbardi F, Ryu K, Kang MH, Rohatgi A
Solar Energy Materials and Solar Cells, 123, 92, 2014 |
| 5 |
Influence of the microstructure of n-type Si:H and passivation by ultrathin Al2O3 on the efficiency of Si radial junction nanowire array solar cells
Li KT, Wang XQ, Lu PF, Ding JN, Yuan NY
Solar Energy Materials and Solar Cells, 128, 11, 2014 |
| 6 |
Electrodeposition of uniformly distributed Ru and Ru-Pt nanoparticles onto n-type Si electrodes
Macherzynski M, Kasuya A
Electrochimica Acta, 95, 288, 2013 |
| 7 |
High rate performance of virus enabled 3D n-type Si anodes for lithium-ion batteries
Chen XL, Gerasopoulos K, Guo JC, Brown A, Ghodssi R, Culver JN, Wang CS
Electrochimica Acta, 56(14), 5210, 2011 |
| 8 |
Modeling of direct tunneling for thin SiO2 film on n-type Si(100) by WKB method considering the quantum effect in the accumulation layer
Matsuo N, Takami Y, Kitagawa Y
Solid-State Electronics, 46(4), 577, 2002 |
