검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Feasibility of re-oxidized nitrided oxide (RONO) as a charge-trapping medium for the non-volatile memory Lee SE, Kim JY, An HM, Seo KY, Kim B Solid-State Electronics, 51(7), 1009, 2007 |
| 2 |
Dielectric properties of nitric oxide-annealed gate oxides grown on nitrogen-implanted silicon substrates Chen YY, Chien CH, Lou JC Thin Solid Films, 513(1-2), 264, 2006 |
| 3 |
Effects of plasma nitridation on ultra-thin gate oxide electrical and reliability characteristics He YD, Xu MZ, Tan CH Solid-State Electronics, 49(1), 57, 2005 |
| 4 |
Modeling of the gate leakage current reduction in MOSFET with ultra-thin nitrided gate oxide Yang CW, Fang YK, Ting SF, Chen CH, Wang WD, Lin TY, Wang MF, Yu MC, Chen CL, Yao LG, Chen SC, Yu CH, Liang MS Solid-State Electronics, 47(4), 751, 2003 |
| 5 |
The 1.3-1.6 nm nitrided oxide prepared by NH3 nitridation and rapid thermal annealing for 0.1 mu m and beyond CMOS technology application Chen CH, Fang YK, Yang CW, Tsair YS, Wang MF, Yao LG, Chen SC, Yu CH, Liang MS Solid-State Electronics, 46(4), 539, 2002 |
| 6 |
Transistor optimisation for a low cost, high performance 0.13 mu m CMOS technology Augendre E, Kubicek S, De Keersgieter A, Mertens S, Lindsay R, Verbeeck R, Van Laer J, Dupas L, Badenes G Solid-State Electronics, 46(7), 959, 2002 |
| 7 |
Indications for nitrogen-assisted removal of carbon from SiO(2)-SiC interface Jamet P, Dimitrijev S, Tanner P Materials Science Forum, 353-356, 655, 2001 |
| 8 |
Growth-Rate and Characterization of Silicon-Oxide Films Grown in N2O Atmosphere in a Rapid Thermal Processor Lange P, Bernt H, Hartmannsgruber E, Naumann F Journal of the Electrochemical Society, 141(1), 259, 1994 |
| 9 |
Low-Energy (3-100 eV) Electron-Bombardment-Induced Nitridation of Thin SiO2-Films - Physicochemical and Electrical Analyses Glachant A, Garcia V, Balland B, Bureau JC, Plossu C, Dupuy JC, Straboni A Thin Solid Films, 238(1), 31, 1994 |