검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots Dimastrodonato V, Mereni LO, Young RJ, Pelucchi E Journal of Crystal Growth, 315(1), 119, 2011 |
| 2 |
Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers Kappers MJ, Datta R, Oliver RA, Rayment FDG, Vickers ME, Humphreys CJ Journal of Crystal Growth, 300(1), 70, 2007 |
| 3 |
Growth and characterisation of semi-polar (11(2)over-bar-2) InGaN/GaN MQW structures Kappers MJ, Hollander JL, McAleese C, Johnston CF, Broom RF, Barnard JS, Vickers ME, Humphreys CJ Journal of Crystal Growth, 300(1), 155, 2007 |
| 4 |
Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH, Humphreys CJ Journal of Crystal Growth, 308(2), 302, 2007 |
| 5 |
Trimethylindium transport studies: the effect of different bubbler designs Smith LM, Odedra R, Kingsley A, Coward KM, Rushworth SA, Williams G, Leese TA, Purdie AJ, Kanjolia RK Journal of Crystal Growth, 272(1-4), 37, 2004 |
| 6 |
Effects of Si doping on ordering and domain structures in GaInP Lee SM, Seong TY, Lee RT, Stringfellow GB Applied Surface Science, 158(3-4), 223, 2000 |