화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate
Bessolov VN, Karpov DV, Konenkova EV, Lipovskii AA, Osipov AV, Redkov AV, Soshnikov IP, Kukushkin SA
Thin Solid Films, 606, 74, 2016
2 Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN
Ali M, Romanov AE, Suihkonen S, Svensk O, Sintonen S, Sopanen M, Lipsanen H, Nevedomsky VN, Bert NA, Odnoblyudov MA, Bougrov VE
Journal of Crystal Growth, 344(1), 59, 2012
3 Void shape control in GaN re-grown on hexagonally patterned mask-less GaN
Ali M, Romanov AE, Suihkonen S, Svensk O, Torma PT, Sopanen M, Lipsanen H, Odnoblyudov MA, Bougrov VE
Journal of Crystal Growth, 315(1), 188, 2011
4 TEM studies of GaN layers grown in non-polar direction: Laterally overgrown and pendeo-epitaxial layers
Liliental-Weber Z
Journal of Crystal Growth, 310(17), 4011, 2008
5 Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)
Bishop SM, Park JS, Gu J, Wagner BP, Reltmeier ZJ, Batchelor DA, Zakharov DN, Liliental-Weber Z, Davis RF
Journal of Crystal Growth, 300(1), 83, 2007
6 Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates
Wagner BP, Reitmeier ZJ, Park JS, Bachelor D, Zakharov DN, Liliental-Weber Z, Davis RF
Journal of Crystal Growth, 290(2), 504, 2006
7 Microstructures in the pendeo epitaxial layer of 3C-SiC on Si substrate
Shoji A, Nakamura M, Mitikami K, Isshiki T, Ohshima S, Nishino S
Materials Science Forum, 483, 221, 2005
8 Pendeo epitaxial growth of 3C-SiC on Si substrates
Shoji A, Okui Y, Nishiguchi T, Ohshima S, Nishino S
Materials Science Forum, 457-460, 257, 2004
9 Control of pendeo epitaxial growth of 3C-SiC on silicon substrate
Okui Y, Jacob C, Ohshima S, Nishino S
Materials Science Forum, 433-4, 209, 2002
10 Laterally overgrown structures as substrates for lattice mismatched epitaxy
Zytkiewicz ZR
Thin Solid Films, 412(1-2), 64, 2002