검색결과 : 27건
| No. | Article |
|---|---|
| 1 |
Influence of oxygen concentration on the optoelectronic properties of hydrogenated polymorphous silicon thin films Escobar-Carrasquilla JD, Alvarez-Macias C, Dutt A, Mon-Perez E, Huerta L, Santana G Thin Solid Films, 638, 389, 2017 |
| 2 |
Chemical and structural properties of polymorphous silicon thin films grown from dichlorosilane Alvarez-Macias C, Monroy BM, Huerta L, Canseco-Martinez MA, Picquart M, Santoyo-Salazar J, Sanchez MFG, Santana G Applied Surface Science, 285, 431, 2013 |
| 3 |
Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications Moreno M, Delgadillo N, Torres A, Ambrosio R, Rosales P, Kosarev A, Reyes-Betanzo C, de la Hidalga-Wade J, Zuniga C, Calleja W Thin Solid Films, 548, 533, 2013 |
| 4 |
High deposition rate hydrogenated polymorphous silicon characterized by different capacitance techniques Darwich R, Cabarrocas PRI Thin Solid Films, 519(16), 5364, 2011 |
| 5 |
A THREE-STAGE FREEZING MODEL FOR LIQUID DROPLETS WITH APPLICATIONS TO FOOD SPRAYS Tanner FX, Feigl KA, Windhab EJ Atomization and Sprays, 20(11), 1005, 2010 |
| 6 |
Temperature dependence of pin solar cell parameters with intrinsic layers made of pm-Si:H and low crystalline volume fraction mu C-Si:H Hamadeh H Renewable Energy, 35(7), 1419, 2010 |
| 7 |
Polymorphous silicon thin films deposited at high rate: Transport properties and density of states Soro YM, Abramov A, Gueunier-Farret ME, Johnson EV, Longeaud C, Cabarrocas PRI, Kleider JP Thin Solid Films, 516(20), 6888, 2008 |
| 8 |
Influence of deposition parameters on hole mobility in polymorphous silicon Brinza M, Adriaenssens GJ, Abramov A, Cabarrocas RRI Thin Solid Films, 515(19), 7504, 2007 |
| 9 |
3 dimensional polymorphous silicon based metal-insulator-semiconductor position sensitive detectors Aguas H, Pereira S, Costa D, Barquinha P, Pereira L, Fortunato E, Martins R Thin Solid Films, 515(19), 7530, 2007 |
| 10 |
MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge Aguas H, Pereira L, Raniero L, Fortunato E, Martins R Materials Science Forum, 455-456, 73, 2004 |