| 1 |
Study on the combustion characteristics and ignition limits of the methane homogeneous charge compression ignition with hydrogen addition in micro-power devices
Wang Q, Zhao Y, Wu F, Bai J
Fuel, 236, 354, 2019 |
| 2 |
Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application
Sun HD, Park YJ, Li KH, Liu XW, Detchprohm T, Zhang XX, Dupuis RD, Li XH
Applied Surface Science, 458, 949, 2018 |
| 3 |
Characterization of asymmetric ultracapacitors as hybrid pulse power devices for efficient energy storage and power delivery applications
Zhu WHH, Tatarchuk BJ
Applied Energy, 169, 460, 2016 |
| 4 |
Numerical simulation of catalysis combustion inside micro free-piston engine
Wang Q, Zhang D, Bai J, He ZX
Energy Conversion and Management, 113, 243, 2016 |
| 5 |
Analytical model of LDMOS with a double step buried oxide layer
Yuan S, Duan BX, Cao Z, Guo HJ, Yang YT
Solid-State Electronics, 123, 6, 2016 |
| 6 |
Transient collector modulation of 4H-SiC BJTs during switch-on process
Yuferev VS, Levinshtein ME, Ivanov PA, Zhang JQ, Palmour JW
Solid-State Electronics, 123, 130, 2016 |
| 7 |
Using Improved Power Electronics Modeling and Turbine Control to Improve Wind Turbine Reliability
Lei T, Barnes M, Smith S, Hur SH, Stock A, Leithead WE
IEEE Transactions on Energy Conversion, 30(3), 1043, 2015 |
| 8 |
High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O-2 treatment
Seok O, Han MK, Byun YC, Kim J, Shin HC, Ha MW
Solid-State Electronics, 103, 49, 2015 |
| 9 |
Influence of inserting AlN between AlSiON and 4H-SiC interface for the MIS structure
Komatsu N, Satoh T, Honjo M, Futatuki T, Masumoto K, Kimura C, Aoki H
Applied Surface Science, 257(20), 8307, 2011 |
| 10 |
A 2-dimensional fully analytical model for design of high voltage junction barrier Schottky (JBS) diodes
Radhakrishnan R, Zhao JH
Solid-State Electronics, 63(1), 167, 2011 |
