화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Design and optimization of high voltage LDMOS transistors on 0.18 mu m SOI CMOS technology
Toulon G, Cortes I, Morancho F, Hugonnard-Bruyere E, Villard B, Toren WJ
Solid-State Electronics, 61(1), 111, 2011
2 Demonstration of the first SiC power integrated circuit
Sheng K, Zhang YX, Su M, Zhao JH, Li XQ, Alexandrov P, Fursin L
Solid-State Electronics, 52(10), 1636, 2008
3 Effects of a trench under the gate in high voltage RESURF LDMOSFET for SOI power integrated circuits
Son WS, Sohn YH, Choi SY
Solid-State Electronics, 48(9), 1629, 2004
4 Silicon/oxide/silicon carbide (SiOSiC) - A new approach for high voltage, high frequencies integrated circuits
Udrea F, Mihaila A, Azar R
Materials Science Forum, 389-3, 1255, 2002
5 The integration of high-side and low-side LIGBTs on partial silicon-on-insulator
Garner DM, Udrea F, Lim HT, Milne WI
Solid-State Electronics, 44(6), 929, 2000