| 1 |
On the C-V characteristics of nanoscale strained gate-all-around Si/SiGe MOSFETs
Kumari A, Kumar S, Sharma TK, Das MK
Solid-State Electronics, 154, 36, 2019 |
| 2 |
A review of special gate coupling effects in long-channel SOI MOSFETs with lightly doped ultra-thin bodies and their compact analytical modeling
Rudenko T, Nazarov A, Kilchytska V, Flandre D
Solid-State Electronics, 117, 66, 2016 |
| 3 |
Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation
Balaguer M, Roldan JB, Donetti L, Gamiz F
Solid-State Electronics, 67(1), 30, 2012 |
| 4 |
A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates
Satter MM, Islam AE, Varghese D, Alam MA, Haque A
Solid-State Electronics, 56(1), 141, 2011 |
| 5 |
Physics-based compact model for ultra-scaled FinFETs
Yesayan A, Pregaldiny F, Chevillon N, Lallement C, Sallese JM
Solid-State Electronics, 62(1), 165, 2011 |
| 6 |
An analytical model for square GAA MOSFETs including quantum effects
Moreno E, Roldan JB, Ruiz FG, Barrera D, Godoy A, Gamiz F
Solid-State Electronics, 54(11), 1463, 2010 |
| 7 |
Novel correlations between the critical constants of the noble gases
Molyneux P
Fluid Phase Equilibria, 279(1), 41, 2009 |
| 8 |
A comparison of quantum correction models for nanoscale MOS structures under inversion conditions
Li Y
Materials Science Forum, 480, 603, 2005 |
| 9 |
An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs
Pregaldiny F, Lallement C, van Langevelde R, Mathiot D
Solid-State Electronics, 48(3), 427, 2004 |
| 10 |
A capacitance-voltage model for polysilicon-gated MOS devices including substrate quantization effects based on modification of the total semiconductor charge
Vogel EM, Richter CA, Rennex BG
Solid-State Electronics, 47(9), 1589, 2003 |
