| 1 |
Design and fabrication of low power GaAs/AlAs resonant tunneling diodes
Zawawi MAM, Missous M
Solid-State Electronics, 138, 30, 2017 |
| 2 |
Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode
Kawashima T, Sakuraba M, Murota J
Thin Solid Films, 557, 302, 2014 |
| 3 |
Fabrication of high-Ge-fraction strained Si1-xGex/Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers
Takahashi K, Sakuraba M, Murota J
Solid-State Electronics, 60(1), 112, 2011 |
| 4 |
Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Si1-xGex/Si(100) heterostructure
Seo T, Takahashi K, Sakuraba M, Murota J
Solid-State Electronics, 53(8), 912, 2009 |
| 5 |
Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x > 0.4) Si/strained Si1-xGex/Si(100) heterostructure
Seo T, Sakuraba M, Murota J
Applied Surface Science, 254(19), 6265, 2008 |
| 6 |
Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si(1-x)Ge(x)/Si(100) heterostructure
Seo T, Sakuraba M, Murota J
Thin Solid Films, 517(1), 110, 2008 |
| 7 |
High current density and high PVCR Si/Si1-xGex DQW RTD formed with quadruple-layer buffer
Maekawa H, Sano Y, Ueno C, Suda Y
Journal of Crystal Growth, 301, 1017, 2007 |
| 8 |
Si1-xGex sputter epitaxy technique and its application to RTD
Kubota J, Hashimoto A, Suda Y
Thin Solid Films, 508(1-2), 20, 2006 |
| 9 |
Numerical local-potential-averaging method for quantum mechanical simulations
Kim KY
Solid-State Electronics, 49(2), 239, 2005 |
| 10 |
Current spreading in contact layers and model for 2D numerical calculation of resonant-tunneling diode
Biryulin PI, Gorbatsevich AA, Tsibizov AG
Solid-State Electronics, 47(5), 769, 2003 |
