검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Type-II InAs/GaSb superlattice grown on InP substrate Miura K, Iguchi Y, Kawamura Y Journal of Crystal Growth, 378, 121, 2013 |
| 2 |
Self-assembled InAs quantum dots grown on InP (311)B substrates: Role of buffer layer and amount of InAs deposited Alghoraibi I, Rohel T, Bertru N, Le Corre A, Letoublon A, Caroff P, Dehaese O, Loualiche S Journal of Crystal Growth, 293(2), 263, 2006 |
| 3 |
Influence of lattice mismatch on hydrogen incorporation into C-doped In0.53Ga0.47As grown by metalorganic chemical vapor deposition Watanabe N, Kobayashi T Journal of Crystal Growth, 236(1-3), 137, 2002 |
| 4 |
Effect of the carrier gas and the group-V precursor on the doping efficiency of SiH4 for InP and In0.54Ga0.46As/InP in LP-MOVPE Keiper D Journal of Crystal Growth, 233(1-2), 121, 2001 |
| 5 |
Effect of the carrier gas and the group-V precursor on the DEZn doping efficiency for InP and In0.54Ga0.46As in LP-MOVPE Keiper D, Westphalen R Journal of Crystal Growth, 233(1-2), 126, 2001 |