| 1 |
A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations
Donetti L, Sampedro C, Ruiz FG, Godoy A, Gamiz F
Solid-State Electronics, 159, 19, 2019 |
| 2 |
Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs
Donetti L, Sampedro C, Ruiz FG, Godoy A, Gamiz F
Solid-State Electronics, 143, 49, 2018 |
| 3 |
Quantum size effect of surface-channeled charge carrier transport in Au nanoparticles-VO2 nanowire assembly
Kim GH, Rathi S, Baik JM, Yi KS
Current Applied Physics, 15(10), 1107, 2015 |
| 4 |
Thermally and optically induced effects on sub-band gap absorption in nanocrystalline CdSe (nc-CdSe) thin films
Sharma K, Al-Kabbi AS, Saini GSS, Tripathi SK
Current Applied Physics, 13(6), 964, 2013 |
| 5 |
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III-V channel materials
Revelant A, Palestri P, Osgnach P, Semi L
Solid-State Electronics, 88, 54, 2013 |
| 6 |
On the extension of ET-FDSOI roadmap for 22 nm node and beyond
Sampedro C, Gamiz F, Godoy A
Solid-State Electronics, 90, 23, 2013 |
| 7 |
Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors
Cheng SY, Lee MH, Chang ST, Lin CY, Chen KT, Hsieh BF
Thin Solid Films, 544, 487, 2013 |
| 8 |
Subband engineering in n-type silicon nanowires using strain and confinement
Stanojevic Z, Sverdlov V, Baumgartner O, Kosina H
Solid-State Electronics, 70, 73, 2012 |
| 9 |
Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization
Sampedro C, Gamiz F, Donetti L, Godoy A
Solid-State Electronics, 70, 101, 2012 |
| 10 |
Subband structure and effective mass of relaxed and strained Ge (110) PMOSFETs
Hsieh BF, Chang ST
Solid-State Electronics, 60(1), 37, 2011 |
