1 |
Effect of surface step on nanoindentation of thin films by multiscale analysis Lu HB, Ni YS Thin Solid Films, 520(15), 4934, 2012 |
2 |
Dissolution kinetics at edge dislocation site of (1 1 1) surface of copper crystals Imashimizu Y Journal of Crystal Growth, 318(1), 125, 2011 |
3 |
Role of steps in the reactivity of the anatase TiO2(101) surface Gong XQ, Selloni A Journal of Catalysis, 249(2), 134, 2007 |
4 |
Surface mechanisms in homoepitaxial growth on alpha-SiC {0001}-vicinal faces Nakamura S, Kimoto T, Matsunami H Materials Science Forum, 457-460, 163, 2004 |
5 |
In situ observation of step-terrace structures on MOVPE grown InP(001) by using grazing X-ray scattering Kawamura T, Bhunia S, Watanabe Y, Fujikawa S, Matsui J, Kagoshima Y, Tsusaka Y Applied Surface Science, 216(1-4), 361, 2003 |
6 |
Wide-area homoepitaxial growth of 6H-SiC on nearly on-axis (0001) by chemical vapor deposition Nakamura S, Kimoto T, Matsunami H Materials Science Forum, 433-4, 149, 2002 |
7 |
Interface-supersaturation estimated from the shape of steps on the surface of InP MCE by LPE Naritsuka S, Nishinaga T Journal of Crystal Growth, 222(1-2), 14, 2001 |
8 |
Macrostep and mound formation during AlGaAs growth on vicinal GaAs(110) studied by scanning tunneling microscopy Hasegawa S, Arakawa K, Oooka H, Nakashima H Applied Surface Science, 162, 430, 2000 |
9 |
RHEED study of atomic steps on ZnSe surface growing on vicinal GaAs substrates Abe H, Kanemaru M, Egawa T, Nabetani Y, Kato T, Matsumoto T Journal of Crystal Growth, 214, 595, 2000 |