검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Fabrication of Si and Ge nanoarrays through graphoepitaxial directed hardmask block copolymer self-assembly Gangnaik AS, Ghoshal T, Georgiev YM, Morris MA, Holmes JD Journal of Colloid and Interface Science, 531, 533, 2018 |
| 2 |
Nitridation of silicon by nitrogen neutral beam Hara Y, Shimizu T, Shingubara S Applied Surface Science, 363, 555, 2016 |
| 3 |
Effect of a Multi-Step Gap-Filling Process to Improve Adhesion between Low-K Films and Metal Patterns Lee W, Kim TH, Choa YH Korean Journal of Materials Research, 26(8), 427, 2016 |
| 4 |
Gap-Fill Characteristics and Film Properties of DMDMOS Fabricated by an F-CVD System Lee W, Fukazawa A, Choa YH Korean Journal of Materials Research, 26(9), 455, 2016 |
| 5 |
Complete filling of 41 nm trench pattern using Cu seed layer deposited by SAM-modified electroless plating and electron-beam evaporation Han WK, Hwang GH, Hong SJ, An HH, Yoon CS, Kim JH, Lee MJ, Hong G, Park KS, Kang SG Applied Surface Science, 256(8), 2649, 2010 |
| 6 |
Superconformal filling of 41 nm trenches with Cu electroless deposition on Au-activated self-assembled monolayer Han WK, Hwang GH, Hong SJ, An HH, Yoon CS, Kim JH, Lee MJ, Hong G, Park KS, Kang SG Materials Chemistry and Physics, 123(2-3), 401, 2010 |
| 7 |
Fabrication and characterization of a Cu seed layer on a 60-nm trench-patterned SiO2 substrate by a self-assembled-monolayer (SAM) process Han WK, Hwang GH, Hong SJ, Yoon CS, Park JS, Cho JK, Kang SG Applied Surface Science, 255(12), 6082, 2009 |