| E1 - E1 |
International Symposium on Next Generation Terabit Memory Technology -CAP/2010 ISNGTMT Supplement Korea 26 August 2010
Park JG |
| E2 - E5 |
Investigation of 3-D stacked NAND flash memory cell string having 4F(2) cell size and shield layer for suppressing cross-talk
Jeong MK, Lee JW, Lee JH |
| E6 - E9 |
Charge loss in WSi2 nanocrystals nonvolatile memory with SiO2/Si3N4/SiO2 tunnel layer
Lee DU, Lee HJ, Kim EK, You HW, Cho WJ |
| 117 - 161 |
Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films
Pawar SM, Pawar BS, Kim JH, Joo OS, Lokhande CD |
| 162 - 165 |
Top-emitting organic light-emitting devices based on silicon substrate using Delta -doping technique
Wu ZJ, Guo HQ, Wang JX |
| 166 - 170 |
Anisotropic electric properties of Copper-(II)-Phthalocyanine thin films characterized by a near-field microwave microscope
Babajanyan A, Enkhtur L, Khishigbadrakh BE, Melikyan H, Yoon Y, Kim S, Lee H, Kim T, Lee K, Friedman B |
| 171 - 175 |
High mobility, bottom gate, nanocrystalline silicon thin film transistors incorporating a nitrogenated incubation layer
Bu IYY, Flewitt AJ, Milne WI |
| 176 - 181 |
Nonlinear optical properties of a hydrogenic impurity in an ellipsoidal finite potential quantum dot
Rezaei G, Vahdani MRK, Vaseghi B |
| 182 - 187 |
Ion beam analysis of sputtered AlN films
Mahmood A, Andrade E, Muhl S, Shah A, Khizar M, Raja MYA |
| 188 - 190 |
Effect of doping on metal doped semiconductor
Datt BM, Suzuki S, Sakurai T, Akimoto K |
| 191 - 198 |
Microwave sintering of iron deficient Ni-Cu-Zn ferrites for multilayer chip inductors
Reddy MP, Madhuri W, Balakrishnaiah G, Reddy NR, Kumar KVS, Murthy VRK, Reddy RR |
| 199 - 202 |
Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process
Lee JB, Choi CJ, Seong TY |
| 203 - 210 |
Dielectric relaxation in bismuth layer-structured BaBi4Ti4O15 ferroelectric ceramics
Kumar S, Varma KBR |
| 211 - 216 |
Amperometric sensing of hydrogen peroxide via highly roughened macroporous Gold-/Platinum nanoparticles electrode
Lee YJ, Park JY, Kim Y, Ko JW |
| 217 - 222 |
Synthesis and characterization of Se doped polyaniline
Shumaila, Lakshmi GBVS, Alam M, Siddiqui AM, Zulfequar M, Husain M |
| 223 - 226 |
Effect of Li on the microstructure and electrical properties of (K0.17Na0.83)NbO3 lead-free piezoceramics
Zang GZ, Wang Y, Yi XJ, Du JA, Xu ZJ |
| 227 - 230 |
Electroless plating of Co-Zn-P thin film onto nanodiamond cores
Zheng ZX, Wang R, Wang CM |
| 231 - 235 |
Optical characterization of quaternary AlInGaN epilayer and multiple quantum wells grown by a pulsed metalorganic chemical vapor deposition
Ryu MY, Chen CQ, Kim JS, Khan MA |
| 236 - 240 |
Hole doping effect on ferromagnetism in Mn-doped ZnO nanowires
Tsogbadrakh N, Choi EA, Lee WJ, Chang KJ |
| 241 - 246 |
Dynamics of oppositely charged carriers in a metal/coupled poly (p-phenylene vinylene) chains/metal structure
Li DM, Li YA, Li HH, Liu DS |
| 247 - 249 |
Biocompatible nanocomposites prepared by impregnating bacterial cellulose nanofibrils into poly(3-hydroxybutyrate)
Cai ZJ, Yang GA, Kim J |
| 250 - 254 |
Characteristics of nanocomposite films deposited by atmospheric pressure uniform RF glow plasma
Uygun A, Oksuz L, Yavuz AG, Gulec A, Sen S |
| E10 - E15 |
Multi-layer stacked OHA and AHA tunnel barriers for charge trap flash non-volatile memory application
Son JW, You HW, Cho WJ |
| E16 - E20 |
Enhanced tunneling properties of band-engineered (HfO2)(x)(SiO2)(1-x)/SiO2 double dielectric layers for non-volatile flash memory device
Heo MY, Kim J, Kang HY, Oh J, Lee K, Sohn H |
| E21 - E24 |
Charge-based nonvolatile memory: Near the end of the roadmap?
Van Houdt J |
| E25 - E29 |
Dependence of nonvolatile memory characteristics on curing temperature for polymer memory-cell embedded with Au nanocrystals in poly(N-vinylcarbazole)
Lee JD, Seung HM, Kwon KC, Park JG |
| E30 - E34 |
Non-volatile memory characteristics of epitaxially grown PVDF-TrFE thin films and their printed micropattern application
Park YJ, Kang SJ, Shin Y, Kim RH, Bae I, Park C |
| E35 - E39 |
Critical role of top interface layer on the bipolar resistive switching of Al/PEDOT:PSS/Al memory device
Kim JY, Jeong HY, Kim JW, Yoon TH, Choi SY |
| E40 - E43 |
Dependence of the trap density and the distribution on the current bistability in organic bistable devices
You CH, Jung JH, Kwak JK, Kim TW |
| E44 - E48 |
Solution-processable fullerene derivatives for organic photovoltaics and n-type thin-film transistors
Nam SY, Park EY, Kim TD, Cho S, Park JG, Lee KS |
| E49 - E57 |
Recent results on organic-based molecular memories
De Salvo B, Buckley J, Vuillaume D |
| E58 - E61 |
Improved resistive switching properties in Pt/Pr0.7Ca0.3MnO3/Y2O3-stabilized ZrO2/W via-hole structures
Liu X, Biju KP, Park S, Kim I, Siddik M, Sadaf S, Hwang H |
| E62 - E65 |
Bipolar resistance switching in the Pt/WOx/W nonvolatile memory devices
Biju KP, Liu X, Kim S, Siddik M, Shin J, Lee J, Hwang H |
| E66 - E69 |
Dependence of resistive switching behaviors on oxygen content of the Pt/TiO2-x/Pt matrix
Bae YC, Lee AR, Kwak JS, Im H, Hong JP |
| E70 - E74 |
Effect of W impurity on resistance switching characteristics of NiOx films
Kim J, Na H, Lee S, Sung YH, Yoo JH, Lee DS, Ko DH, Sohn H |
| E75 - E78 |
Bipolar resistive switching in oxides: Mechanisms and scaling
Bruchhaus R, Muenstermann R, Menke T, Hermes C, Lentz F, Weng R, Dittmann R, Waser R |
| E79 - E81 |
Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTe
Zhang G, Wu Z, Jeong JH, Jeong DS, Yoo WJ, Cheong BK |
| E82 - E84 |
A microscopic model for resistance drift in amorphous Ge2Sb2Te5
Im J, Cho E, Kim D, Horii H, Ihm J, Han S |
| E85 - E91 |
Unified physical modeling of reliability mechanisms and scaling perspective of phase change memory
Ielmini D |
| E92 - E94 |
Magnetic noise spectra and spin transfer torque of a magnetic tunnel junction with an exchange biased synthetic ferrimagnetic reference layer
You CY, Yoon J, Park SY, Yuasa S, Jung MH |
| E95 - E100 |
Effects of defects on the switching properties of the nanostructured cells of a single layer and a synthetic ferrimagnet
Lee SG, Lim SH |
| E101 - E103 |
Challenges and opportunities for future non-volatile memory technology
Nishi Y |
| E104 - E109 |
Scanning probe memories - Technology and applications
Wright CD, Aziz MM, Shah P, Wang L |
