| 1 - 5 |
AlGaN/GaN MOS-HEMTs-on-Si employing sputtered TaN-based electrodes and HfO2 gate insulator
Seok O, Ha MW |
| 6 - 11 |
High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
Golshani N, Derakhshandeh J, Beenakker CIM, Ishihara R |
| 12 - 15 |
Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode
Chang TF, Huang CF, Yang TY, Chiu CW, Huang TY, Lee KY, Zhao F |
| 16 - 20 |
A link between noise parameters and light exposure in GaAs pHEMT's
Caddemi A, Crupi G, Salvo G |
| 21 - 29 |
Spice-compatible modeling of high injection and propagation of minority carriers in the substrate of Smart Power ICs
Stefanucci C, Buccella P, Kayal M, Sallese JM |
| 30 - 36 |
a-GIZO TFT neural modeling, circuit simulation and validation
Bahubalindruni PG, Tavares VG, Barquinha P, Duarte C, Cardoso N, de Oliveira PG, Martins R, Fortunato E |
| 37 - 44 |
Impact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs
Kudina V, Garbar N, Simoen E, Claeys C |
| 45 - 50 |
An enhancement-mode pseudomorphic high electron mobility transistor prepared by an Electroless Plating (EP) and a gate-sinking approaches
Chen CC, Chen HI, Liu IP, Chou PC, Liou JK, Tsai JH, Liu WC |
| 51 - 57 |
Effect of annealing temperature and X-ray irradiation on the performance of tetraphenylporphyrin/p-type silicon hybrid solar cell
Makhlouf MM, Zeyada HM |
| 58 - 62 |
Solution-processed organic light-emitting diodes with a power efficacy exceeding 100 lm/W using multiple light extraction approaches
Lin WC, Chen CW, Lin HW |
| 63 - 69 |
Analytical modeling of cutoff frequency variability reserving correlations due to random dopant fluctuation in nanometer MOSFETs
Lu WF, Wang GY, Sun LL |
| 70 - 73 |
Graphite/ZnO nanorods junction for ultraviolet photodetectors
Yatskiv R, Grym J, Verde M |
