Solid-State Electronics

Solid-State Electronics, Vol.107 Entire volume, number list

ISSN: 0038-1101 (Print)

1 - 7	Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III-V technology Hiblot G, Lacord J, Akbal M, Rafhay Q, Boeuf F, Ghibaudo G
8 - 10	Heterojunctions based on photochemically deposited CuxZnyS and electrochemically deposited ZnO Ichimura M, Maeda Y
11 - 14	Enhanced solar energy harvesting using top n-contact GaAs solar cell Das NC
15 - 19	CMOS compatible on-chip decoupling capacitor based on vertically aligned carbon nanofibers Saleem AM, Goransson G, Desmaris V, Enoksson P
20 - 29	Modeling and simulation of Double Gate Junctionless Transistor considering fringing field effects Kumari V, Modi N, Saxena M, Gupta M
30 - 34	Enhanced light emission in vertical-structured GaN-based light-emitting diodes with trench etching and arrayed p-electrodes Lin TH, Wang SJ, Tu YC, Hung CH, Lin CA, Lin YC, You ZS
35 - 39	Pulse-width-independent low power programmable low temperature poly-Si thin-film transistor shift register Song E, Song SJ, Nam H
40 - 46	A study on NiGe-contacted Ge n(+)/p Ge shallow junction prepared by dopant segregation technique Tsui BY, Shih JJ, Lin HC, Lin CY