Solid-State Electronics

Solid-State Electronics, Vol.108 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (19 articles)

1 - 1	Editorial Selected papers from the 15th Ultimate Integration on Silicon (ULIS) conference Ostling M, Malm BG
2 - 7	Influence of magnetization variations in the free layer on a non-volatile magnetic flip flop Windbacher T, Makarov A, Sverdlov V, Selberherr S
8 - 12	Fabrication and properties of GeSi and SiON layers for above-IC integrated optics Schmitz J, Rangarajan B, Kovalgin AY
13 - 18	Electrical properties and strain distribution of Ge suspended structures Shah VA, Rhead SD, Finch J, Myronov M, Reparaz JS, Morris RJ, Wilson NR, Kachkanov V, Dolbnya IP, Halpin JE, Patchett D, Allred P, Colston G, Sawhney KJS, Torres CMS, Leadley DR
19 - 23	Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3% Luong GV, Knoll L, Blaeser S, Suess MJ, Sigg H, Schafer A, Trellenkamp S, Bourdelle KK, Buca D, Zhao QT, Mantl S
24 - 29	Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs Litta ED, Hellstrom PE, Ostling M
30 - 35	Low temperature characterization of mobility in 14 nm FD-SOI CMOS devices under interface coupling conditions Shin M, Shi M, Mouis M, Cros A, Josse E, Kim GT, Ghibaudo G
36 - 41	Assessment of technological and geometrical device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs Koyama M, Casse M, Barraud S, Ghibaudo G, Iwai H, Faynot O, Rehnbold G
42 - 46	Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs Tallarico AN, Magnone P, Barletta G, Magri A, Sangiorgi E, Fiegna C
47 - 52	Wide frequency band assessment of 28 nm FDSOI technology platform for analogue and RF applications Makovejev S, Esfeh BK, Barral V, Planes N, Haond M, Flandre D, Raskin JP, Kilchytska V
53 - 60	A comparative mismatch study of the 20 nm Gate-Last and 28 nm Gate-First bulk CMOS technologies Rahhal L, Bajolet A, Manceau JP, Rosa J, Ricq S, Lassere S, Ghibaudo G
61 - 66	Large scale integration of graphene transistors for potential applications in the back end of the line Smith AD, Vaziri S, Rodriguez S, Ostling M, Lemme MC
67 - 74	Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons Poljak M, Wang KL, Suligoj T
75 - 83	Interface and strain effects on the fabrication of suspended CVD graphene devices Aydin OI, Hallam T, Thomassin JL, Mouis M, Duesberg GS
84 - 89	On the modeling of Coulomb scattering in p-MOSFETs with hafnium based metal gate stacks Kuligk A, Meinerzhagen B
90 - 96	The impact of interface states on the mobility and drive current of In0.53Ga0.47As semiconductor n-MOSFETs Osgnach P, Caruso E, Lizzit D, Palestri P, Esseni D, Selmi L
97 - 103	Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity Richter S, Trellenkamp S, Schafer A, Hartmann JM, Bourdelle KK, Zhao QT, Mantl S
104 - 109	Capacitance estimation for In As Tunnel FETs by means of full-quantum k . p simulation Gnani E, Baravelli E, Gnudi A, Reggiani S, Baccarani G
110 - 117	Universal analytic model for tunnel FET circuit simulation Lu H, Esseni D, Seabaugh A