Solid-State Electronics

Solid-State Electronics, Vol.109 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (17 articles)

1 - 7	Word line program disturbance based data retention error recovery strategy for MLC NAND Flash Ma HZ, Pan LY, Song CL, Gao ZY, Wu D, Xu J
8 - 11	Effects of dielectric material properties on graphene transistor performance Jang SK, Jeon J, Jeon SM, Song YJ, Lee S
12 - 16	Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes Megherbi ML, Pezzimenti F, Dehimi L, Rao S, Della Corte FG
17 - 24	A model of the off-behaviour of 4H-SiC power JFETs Bellone S, Di Benedetto L, Licciardo GD
25 - 28	The research on temperature distribution of GaN-based blue laser diode Shi D, Feng SW, Qiao YB, Wen PY
29 - 32	Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer Chen PH, Chen YA, Chang LC, Lai WC, Kuo CH
33 - 36	Impact of active layer thickness in thin-film transistors based on Zinc Oxide by ultrasonic spray pyrolysis Dominguez MA, Flores F, Luna A, Martinez J, Luna-Lopez JA, Alcantara S, Rosales P, Reyes C, Orduna A
37 - 41	Study on interface characteristics in amorphous indium-gallium-zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements Wu CF, Huang XM, Lu H, Yu G, Ren FF, Chen DJ, Zhang R, Zheng YD
42 - 46	Characterizing traps causing random telegraph noise during trap-assisted tunneling gate-induced drain leakage Yoo SW, Shin J, Seo Y, Kim H, Jeon S, Kim H, Shin H
47 - 51	Enhanced opto-electrical properties of graphene electrode InGaN/GaN LEDs with a NiOx inter-layer Wu CC, Liu FY, Liu B, Zhuang Z, Dai JP, Tao T, Zhang GG, Xie ZL, Wang XR, Zhang R
52 - 57	Investigation of proton irradiation effects on InP/InGaAs double heterojunction bipolar transistors Liu M, Zhang YM, Lu HL, Zhang YM, Zhang JC, Ren XT
58 - 62	Analysis of static noise margin improvement for low voltage SRAM composed of nano-scale MOSFETs with ideal subthreshold factor and small variability Tanaka C, Saitoh M, Ota K, Numata T
63 - 71	A sum-over-paths algorithm for third-order impulse-response moment extraction within RC IC-interconnect networks Wojcik EA, Ni D, Lam TM, Le Coz YL
72 - 75	Nonvolatile bipolar resistive switching in Ba-doped BiFeO3 thin films Deng HL, Zhang M, Wei JZ, Chu SJ, Du MY, Yan H
76 - 81	A comparison of two crystals of 6,13-bis (tri-isopropylsilylethynyl) pentacene (TIPS-pentacene) prepared for organic field effect transistors (OFETs) Murtaza G, Ahmad I, Wu JK
82 - 89	Effect of Ag doping and insulator buffer layer on the memory mechanism of polymer nanocomposites Kaur R, Kaur J, Tripathi SK
90 - 94	Simulation study of GaN-based HFETs with graded AlGaN barrier Zhou XY, Feng ZH, Fang YL, Wang YG, Lv YJ, Dun SB, Gu GD, Tan X, Song XB, Yin JY, Cai SJ