Solid-State Electronics

Solid-State Electronics, Vol.110 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (16 articles)

1 - 9	Novel Si-Ge-C superlattices and their applications Augusto CJRP, Forester L
10 - 13	Threshold voltage and transconductance shifting reliance on strained-SiGe channel dimension Chang WT, Lin YS, Shih CT
14 - 18	SiGe channel deposition by batch epitaxy Reichel C, Schoenekess J, Dietel A, Wasyluk J, Chow YT, Kammler T
19 - 22	Facet engineering for SiGe/Si stressors in advanced CMOS technology Kasim J, Reichel C, Dilliway G, Bai B, Zakowsky N
23 - 28	Optimization of ISBD embedded SiGe layers to prevent delamination process for MOSFET applications Wasyluk J, Ge Y, Wurster K, Lenski M, Reichel C
29 - 34	Arsenic atomic layer doping in Si using AsH3 Yamamoto Y, Kurps R, Murota J, Tillack B
35 - 39	Revealing high room and low temperatures mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate Myronov M, Morrison C, Halpin J, Rhead S, Foronda J, Leadley D
40 - 43	Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H-2 and Ar environment Minami K, Moriya A, Yuasa K, Maeda K, Yamada M, Kunii Y, Niwano M, Murota J
44 - 48	Epitaxial formation of Ni germanide on Ge(001) substrate by reactive deposition Deng Y, Nakatsuka O, Suzuki A, Sakashita M, Zaima S
49 - 53	Epitaxial growth and crystalline properties of Ge1-x-ySixSny on Ge(001) substrates Asano T, Terashima T, Yamaha T, Kurosawa M, Takeuchi W, Taoka N, Nakatsuka O, Zaima S
54 - 58	Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO2 Yamaha T, Kurosawa M, Ohmura T, Takeuchi W, Taoka N, Nakatsuka O, Zaima S
59 - 64	Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors Schulze J, Blech A, Datta A, Fischer IA, Hahnel D, Naasz S, Rolseth E, Tropper EM
65 - 70	Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes Baert B, Gupta S, Gencarelli F, Loo R, Simoen E, Nguyen ND
71 - 75	Absorption coefficients of GeSn extracted from PIN photodetector response Ye K, Zhang W, Oehme M, Schmid M, Gollhofer M, Kostecki K, Widmann D, Korner R, Kasper E, Schulze J
76 - 82	Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys Xu C, Senaratne CL, Kouvetakis J, Menendez J
83 - 85	Enhanced light emission from Ge by GeO2 micro hemispheres Chen YY, Yen CC, Chang TY, Liu CW