Solid-State Electronics

Solid-State Electronics, Vol.116 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (23 articles)

1 - 7	Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides Cao J, Cresti A, Esseni D, Pala M
8 - 11	A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms Solaro Y, Fonteneau P, Legrand CA, Fenouillet-Beranger C, Ferrari P, Cristoloveanu S
12 - 14	Monolithic integration of low-pass filters with ESD protections on p(+) silicon/porous silicon substrates Capelle M, Billoue J, Concord J, Poveda P, Gautier G
15 - 21	The effect of annealing temperatures to prepare ZnO seeds layer on ZnO nanorods array/TiO2 nanoparticles photoanode Chou HT, Hsu HC
22 - 29	DC sputtered amorphous In-Sn-Zn-O thin-film transistors: Electrical properties and stability Nakata M, Zhao CM, Kanicki J
30 - 32	Study of voltage decrease in organic light emitting diodes during the initial stage of lifetime Cusumano P
33 - 37	A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier Kargarrazi S, Lanni L, Zetterling CM
38 - 45	Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric Rafi JM, Pellegrini G, Fadeyev V, Galloway Z, Sadrozinski HFW, Christophersen M, Phlips BF, Lynn D, Kierstead J, Hoeferkamp M, Gorelov I, Palni P, Wang R, Seidel S
46 - 55	Closed form expressions for sheet resistance and mobility from Van-der-Pauw measurement on 90 degrees symmetric devices with four arbitrary contacts Ausserlechner U
56 - 59	Thin-films and transistors of p-ZnTe Lastra G, Olivas A, Mejia JI, Quevedo-Lopez MA
60 - 64	Hydrogen-induced program threshold voltage degradation analysis in SONOS wafer Lin Q, Zhao C, Sheng N
65 - 69	Preliminary study and design for variation of lateral width SOI LDMOS device Wang Y, Meng XF, Cui SF
70 - 79	Full electrothermal physically-based modeling of the power diode using PSPICE Shaker A, Abouelatta M, El-Banna M, Ossaimee M, Zekry A
80 - 87	Study of drain-extended NMOS under electrostatic discharge stress in 28 nm and 40 nm CMOS process Wang WH, Jin H, Dong SR, Zhong L, Han Y
88 - 94	Impact of gate dielectric constant variation on tunnel field-effect transistors (TFETs) Kim SK, Choi WY
95 - 99	Comprehensive understanding of charge lateral migration in 3D SONOS memories Liu LF, Arreghini A, Van den Bosch G, Pan LY, Van Houdt J
100 - 103	High-performance logic transistor DC benchmarking toward 7 nm technology-node between III-V and Si tri-gate n-MOSFETs using virtual-source injection velocity model Baek RH, Kim JS, Kim DK, Kim T, Kim DH
104 - 106	Extraction of second harmonic from an InP based planar Gunn diode using diamond resonator for milli-metric wave frequencies Maricar MI, Khalid A, Cumming DRS, Oxley CH
107 - 110	Multilayer Pt/Al based ohmic contacts for AlGaN/GaN heterostructures stable up to 600 degrees C ambient air Goyal N, Dusari S, Bardong J, Medjdoub F, Kenda A, Binder A
111 - 118	Comparison of the electron work function, hole concentration and exciton diffusion length for P3HT and PT prepared by thermal or acid cleavage Tousek J, Touskova J, Ludvik J, Liska A, Remes Z, Kylian O, Kousal J, Chomutova R, Heckler IM, Bundgaard E, Krebs FC
119 - 123	The improvement of nitrogen doped Ge2Sb2Te5 on the phase change memory resistance distributions Xu Z, Liu B, Chen YF, Zhang ZH, Gao D, Wang H, Song ZT, Wang CZ, Ren JD, Zhu NF, Xiang YH, Zhan YP, Feng SL
124 - 129	Room temperature hydrogen sensing with the graphite/ZnO nanorod junctions decorated with Pt nanoparticles Yatskiv R, Grym J, Gladkov P, Cernohorsky O, Vanis J, Maixner J, Dickerson JH
130 - 134	Effects of various gate materials on electrical degradation of a-Si:H TFT in industrial display application Ho CY, Chang YJ