| 1 - 5 |
Piecewise physical modeling of series resistance and inductance of on-chip interconnects
Cortes-Hernandez DM, Torres-Torres R, Linares-Aranda M, Gonzalez-Diaz O |
| 6 - 12 |
On the analogy of the potential barrier of trenched JFET and JBS devices
Bellone S, Di Benedetto L, Licciardo GD |
| 13 - 18 |
The influence of top electrode of InGaAsN/GaAs solar cell on their electrical parameters extracted from illuminated I-V characteristics
Dawidowski W, Sciana B, Zborowska-Lindert I, Mikolasek M, Bielak K, Badura M, Pucicki D, Radziewicz D, Kovac J, Tlaczala M |
| 19 - 24 |
Analytical model for an asymmetric double-gate MOSFET with gate-oxide thickness and flat-band voltage variations in the subthreshold region
Shin YH, Yun I |
| 25 - 31 |
Half-Corbino short-channel amorphous In-Ga-Zn-O thin-film transistors with a-SiOx or a-SiOx/a-SiNx passivation layers
Zhao CM, Fung TC, Kanicki J |
| 32 - 40 |
An efficient method for evaluating RRAM crossbar array performance
Song L, Zhang JY, Chen A, Wu HQ, Qian H, Yu ZP |
| 41 - 46 |
Physically-based simulation of zinc oxide thin-film transistors: Contact resistance contribution on density of states
Dominguez MA, Alcantara S, Soto S |
| 47 - 51 |
Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channel
Im KS, Kang HS, Kim DK, Vodapally S, Park Y, Lee JH, Kim YT, Cristoloveanu S, Lee JH |
| 52 - 55 |
Superlattice-like film for high data retention and high speed phase change random access memory
Li L, Song SN, Zhang ZH, Chen LL, Song ZT, Lv SL, Liu B, Guo TQ |
| 56 - 62 |
Improving performance of inverted organic solar cells using ZTO nanoparticles as cathode buffer layer
Tsai MY, Cheng WH, Jeng JS, Chen JS |
