Solid-State Electronics

Solid-State Electronics, Vol.123 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (24 articles)

1 - 5	Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance Ding P, Chen C, Ding WC, Yang F, Su YB, Wang DH, Jin Z
6 - 14	Analytical model of LDMOS with a double step buried oxide layer Yuan S, Duan BX, Cao Z, Guo HJ, Yang YT
15 - 18	Electric-field dependence of electron drift velocity in 4H-SiC Ivanov PA, Potapov AS, Samsonova TP, Grekhov IV
19 - 25	Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects Jarndal A, Ghannouchi FM
26 - 32	Effect of high-k and vacuum dielectrics as gate stack on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET Sharma A, Jain A, Pratap Y, Gupta RS
33 - 37	Enhancement of photo-response via surface plasmon resonance induced by Ag nano-particles embedded in ZnO Li GM, Zhang JW, Chen GD, Ye HG, Duan XY, Hou X
38 - 43	Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22 nm all-last high-k/metal-gate pMOSFETs Qin CL, Wang GL, Hong PZ, Liu JB, Yin HX, Yin HZ, Ma XL, Cui HS, Lu YH, Meng LK, Xiang JJ, Zhong HC, Zhu HL, Xu QX, Li JF, Yan J, Zhao C, Radamson HH
44 - 50	Extraction of parasitic and channel resistance components in FinFETs using TCAD tools Narayanan S, Banghart E, Zeitzoff P, Korablev K, Pandey SM, Gendron-Hansen A, Benistant F
51 - 57	Kilohertz organic complementary inverters driven by surface-grafting conducting polypyrrole electrodes Zhang X, Zhang SN, Li LQ, Chen XS, Xu ZY, Wu KJ, Li HW, Meng YC, Wang WC, Hu WP, Chi LF
58 - 62	Design and experiment of 4H-SiC JBS diodes achieving a near-theoretical breakdown voltage with non-uniform floating limiting rings terminal Yuan H, Song QW, Tang XY, Zhang YM, Zhang YM, Zhang YM
63 - 67	Performance and carrier transport analysis of In0.7Ga0.3As quantum-well MOSFETs with Al2O3/HfO2 gate stack Son SW, Park JH, Baek JM, Kim JS, Kim DK, Shin SH, Banerjee SK, Lee JH, Kim TW, Kim DH
68 - 77	Determining the base resistance of InP HBTs: An evaluation of methods and structures Nardmann T, Krause J, Pawlak A, Schroter M
78 - 83	Modeling of diffusion mechanism of conductive channel oxidation in a Pt/NiO/Pt memory switching structure Sysun VI, Bute IV, Boriskov PP
84 - 88	New Y-function based MOSFET parameter extraction method from weak to strong inversion range Henry JB, Rafhay Q, Cros A, Ghibaudo G
89 - 95	Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique Kolkovsky V, Stubner R, Langa S, Wende U, Kaiser B, Conrad H, Schenk H
96 - 100	A high efficiency C-band internally-matched harmonic tuning GaN power amplifier Lu Y, Zhao BC, Zheng JX, Zhang HS, Zheng XF, Ma XH, Hao Y, Ma PJ
101 - 105	Effects of buffer layer and thermal annealing on the performance of hybrid Cu2S/PVK electrically bistable devices Li X, Lu Y, Guan L, Li JT, Wang YC, Dong GY, Tang AW, Teng F
106 - 110	Transport mechanisms of leakage current in Al2O3/InAlAs MOS capacitors Jin CJ, Lu HL, Zhang YM, Zhang YM, Guan H, Wu LF, Lu B, Liu C
111 - 118	Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions Shaban M, Bayoumi AM, Farouk D, Saleh MB, Yoshitake T
119 - 123	Effect of depth of traps in ZnO polycrystalline thin films on ZnO-TFTs performance Medina-Montes MI, Baldenegro-Perez LA, Sanchez-Zeferino R, Rojas-Blanco L, Becerril-Silva M, Quevedo-Lopez MA, Ramirez-Bon R
124 - 129	Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures de Oliveira AV, Agopian PGD, Martino JA, Simoen E, Claeys C, Collaert N, Thean A
130 - 132	Transient collector modulation of 4H-SiC BJTs during switch-on process Yuferev VS, Levinshtein ME, Ivanov PA, Zhang JQ, Palmour JW
133 - 142	Comprehensive behavioral model of dual-gate high voltage JFET and pinch resistor Banas S, Panko V, Dobes J, Hanys P, Divin J
143 - 149	Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended "Top of the Barrier" model Tanaka H, Suda J, Kimoto T