Solid-State Electronics

Solid-State Electronics, Vol.129 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (34 articles)

1 - 5	Influence of mesa edge capacitance on frequency behavior of millimeter-wave AlGaN/GaN HEMTs Du JF, Wang K, Liu Y, Bai ZY, Liu Y, Feng ZH, Dun SB, Yu Q
6 - 9	Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer Lee SK, Seok KH, Chae HJ, Lee YH, Han JS, Jo HA, Joo SK
10 - 15	Dynamics of the current filament formation and its steady-state characteristics in chalcogenide based PCM Bogoslovskiy N, Tsendin K
16 - 21	Structural, optical, and electrical-transport properties of Al-P-O inorganic layer coated on flexible stainless steel substrate Kim M, Min J, Kwak Y, Kim D, Kim KB, Song J
22 - 28	High-performance vertical Si PiN diode by hole remaining mechanism Tsukuda M, Baba A, Shiba Y, Omura I
29 - 34	Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells Miyoshi M, Tsutsumi T, Kabata T, Mori T, Egawa T
35 - 43	Analysis of the dynamic avalanche of carrier stored trench bipolar transistor (CSTBT) during clamped inductive turn-off transient Xue P, Fu GC
44 - 51	Investigation and process optimization of SONOS cell's drain disturb in 2-transistor structure flash arrays Xu ZZ, Qian WS, Chen HL, Xiong W, Hu J, Liu DH, Duan WT, Kong WR, Na W, Zou SC
52 - 60	Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks Xu M, Zhu HL, Zhang YB, Xu QX, Zhang YK, Qin CL, Zhang QZ, Yin HX, Xu H, Chen S, Luo J, Li CL, Zhao C, Ye TC
61 - 65	A high-speed lateral PIN polysilicon photodiode on standard bulk CMOS process Zou WH, Xia Y, Chen DP, Zeng Y
66 - 72	The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors Protasov DY, Zhuravlev KS
73 - 80	Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit Al-Ameri T, Georgiev VP, Sadi T, Wang YJ, Adamu-Lema F, Wang XS, Amoroso SM, Towie E, Brown A, Asenov A
81 - 87	Analysis of the reverse recovery oscillation of superjunction MOSFET body diode Xue P, Fu GC
88 - 92	Carrier trapping anisotropy in ambipolar SnO thin-film transistors Luo H, Liang LY, Cao HT
93 - 96	Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements Kriso C, Triozon F, Delerue C, Schneider L, Abbate F, Nolot E, Rideau D, Niquet YM, Mugny G, Tavernier C
97 - 102	Single frequency correction based on three-element model for thin dielectric MOS capacitor Zhang XZ, Zhu HC, Cheng CH, Yu T, Zhang DM, Zhang H, Li XP, Cheng Y, Xu XS, Cheng LH, Sun JS, Chen BJ
103 - 107	Impact of series resistance on the operation of junctionless transistors Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G
108 - 113	Extraction method for parasitic capacitances and inductances of HEMT models Zhang HS, Ma PJ, Lu Y, Zhao BC, Zheng JX, Ma XH, Hao Y
114 - 119	Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area Wang C, Zhao MD, He YL, Zheng XF, Wei XX, Mao W, Ma XH, Zhang JC, Hao Y
120 - 124	Influence of polarity of set voltage on the properties of conductive filaments in NiO based nonvolatile memory device Yan HY, Li ZQ
125 - 133	An ultra-wideband CMOS PA with dummy filling for reliability Chang YT, Ye Y, Xu HT, Domier C, Luhmann NC, Gu QJ
134 - 137	A reversible bipolar WORM device based on AlOxNy thin film with Al nano phase embedded Zhu W, Li J, Zhang L, Hu XC
138 - 149	Underlapped FinFET on insulator: Quasi3D analytical model Kumari V, Sharmetha K, Saxena M, Gupta M
150 - 156	Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz Deng M, Quemerais T, Bouvot S, Gloria D, Chevalier P, Lepilliet S, Danneville F, Dambrine G
157 - 162	Design guidelines for GaSb/InAs TFET exploiting strain and device size Visciarelli M, Gnani E, Gnudi A, Reggiani S, Baccarani G
163 - 167	Trap states extraction of p-channel SnO thin-film transistors based on percolation and multiple trapping carrier conductions Qiang L, Liu WG, Pei YL, Wang G, Yao RH
168 - 174	Comprehensive understanding of dark count mechanisms of single-photon avalanche diodes fabricated in deep sub-micron CMOS technologies Xu YX, Xiang P, Xie XP
175 - 181	Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination He YJ, Lv HL, Tang XY, Song QW, Zhang YM, Han C, Zhang YM, Zhang YM
182 - 187	Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET Daghighi A, Hematian H
188 - 195	Gummel Symmetry Test on charge based drain current expression using modified first-order hyperbolic velocity-field expression Singh K, Bhattacharyya AB
196 - 199	Performance enhancement of AlGaN/GaN nanochannel omega-FinFET Im KS, Seo JH, Vodapally S, Kang IM, Lee JH, Cristoloveanu S, Lee JH
200 - 205	Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors Onose H, Kobayashi Y, Onuki J
206 - 209	In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact Chen PG, Tang M, Liao MH, Lee MH
210 - 214	Forming-free and hard-breakdown depressed resistive switching based on natural conductive path Duan WJ, Wang JB, Zhong XL, Song HJ, Li B