Solid-State Electronics

Solid-State Electronics, Vol.158 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (13 articles)

1 - 10	Experimental and modeling insight for fin-shaped transistors based on AlN/GaN/AlN double barrier heterostructure Doundoulakis G, Adikimenakis A, Stavrinidis A, Tsagaraki K, Androulidaki M, Deligeorgis G, Konstantinidis G, Georgakilas A
11 - 15	DC and RF performances of InAs FinFET and GAA MOSFET on insulator Cheng Q, Shariar K, Khandelwal S, Zeng YP
16 - 21	Temperature distribution measurement based on field-programmable gate array embedded ring oscillators Yu WJ, Feng SW, Zhang YM, Shi BB
22 - 27	Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment Kurt G, Gulseren ME, Ghobadi TGU, Ural S, Kayal OA, Ozturk M, Butun B, Kabak M, Ozbay E
28 - 36	Enhanced resistive switching performance of aluminum oxide dielectric with a low temperature solution-processed method Qi YF, Zhao C, Zhao CZ, Xu WY, Shen ZJ, He JH, Zhao TS, Fang YX, Liu QH, Yi RW, Yang L
37 - 45	Junctionless nanowire transistors parameters extraction based on drain current measurements Trevisoli R, Doria RT, de Souza M, Barraud S, Pavanello MA
46 - 50	Interface state degradation during AC positive bias temperature instability stress Kang SC, Kim SM, Jung U, Kim Y, Park W, Lee BH
51 - 58	Optimization of a TiSi2 formation based on PECVD Ti using DoE methodology Hossler D, Ernst M
59 - 63	Investigation on the improvement of stability of nitrogen doped amorphous SiInZnO thin-film transistors Lee BH, Lee DY, Lee JY, Park S, Kim S, Lee SY
64 - 69	Resistive random-access memory with an a-Si/SiNx double-layer Kwon HT, Lee WJ, Choi HS, Wee D, Park YJ, Kim B, Kim MH, Kim S, Park BG, Kim Y
70 - 74	Influence of semiconductor crystallinity on a beta-FeSi2 sensitized thermal cell Matsushita S, Tsuruoka A, Kimura Y, Isobe T, Nakajima A
75 - 84	High mobility solution processed MoS2 thin film transistors Gomes FOV, Pokle A, Marinkovic M, Balster T, Anselmann R, Nicolosi V, Wagner V
85 - 91	Characterization studies of NiO:K anode buffer layer in Alq(3) and TADF-based organic light-emitting diodes by secondary ion mass spectrometry and admittance spectroscopy Malvin, Tsai CT, Chen YY, Kao PC, Chu SY