Solid-State Electronics

Solid-State Electronics, Vol.69 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (21 articles)

1 - 3	UV irradiation effects on hydrogen sensors based on SnO2 thin films fabricated by the photochemical deposition Ao D, Ichimura M
4 - 6	Reproduction of columnar grains after laser crystallization from amorphous-Si to poly-Si using crystallization simulator Matsuki K, Saito R, Tsukamoto S, Kimura M
7 - 10	Self-oscillation in electrochemical transistors: An RLC modeling approach Tu DY, Forchheimer R
11 - 13	Analyzing the current crowding effect induced by oxygen adsorption of amorphous InGaZnO thin film transistor by capacitance-voltage measurements Huang SY, Chang TC, Chen MC, Jian FY, Chen SC, Chen TC, Jheng JL, Lou MJ, Yeh FS
14 - 17	The enhancement of the deflection effect in InGaN/GaN light-emitting diodes with an ellipsoidal air tunnel Kim HK, Ryu JH, Kim HY, Kang JH, Han N, Park YJ, Ryu BD, Ko KB, Baek YS, Lysak VV, Hong CH, Kim HG
18 - 21	Carbon nanotubes' nanocomposite in humidity sensors Shah M, Ahmad Z, Sulaiman K, Karimov KS, Sayyad MH
22 - 26	Low resistive tungsten dual poly-metal gates with multi-diffusion barrier metals in high performance memory devices Sung MG, Kim YS, Kim SJ, Jeong IK, Choi HS, Kim MS, Kim H, Park SK
27 - 30	ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate Hyung GW, Park J, Koo JR, Choi KM, Kwon SJ, Cho ES, Kim YS, Kim YK
31 - 37	Modeling the impact of junction angles in tunnel field-effect transistors Kao KH, Verhulst AS, Vandenberghe WG, Soree B, Groeseneken G, De Meyer K
38 - 42	Exact extraction method of trap densities at insulator interfaces using quasi-static capacitance-voltage characteristics and numerical solutions of physical equations Kimura M, Kojiri T, Tanabe A, Kato T
43 - 49	3D'atomistic' simulations of dopant induced variability in nanoscale implant free In0.75Ga0.25As MOSFETs Seoane N, Aldegunde M, Garcia-Loureiro A, Valin R, Kalna K
50 - 54	Hybrid solar cells with an inverted structure: Nanodots incorporated ternary system Fu HH, Choi MJ, Luan WL, Kim YS, Tu ST
55 - 61	Symmetrical unified compact model of short-channel double-gate MOSFETs Papathanasiou K, Theodorou CG, Tsormpatzoglou A, Tassis DH, Dimitriadis CA, Bucher M, Ghibaudo G
62 - 66	Effect of channel dopant uniformity on MOSFET threshold voltage variability Terada K, Sanai K, Tsuji K, Tsunomura T, Nishida A, Mogami T
67 - 71	Red- and white-emitting organic light-emitting diodes based on trimetallic dendritic europium (III) complex: Eu-3(DBM)(9)(TMMB) Chen LL, Wang BB, Zhang LM, Zhu DX, Li P, Su ZM, Li B
72 - 84	Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs Schwarz M, Holtij T, Kloes A, Iniguez B
85 - 88	Formulas of 1/f noise in Schottky barrier diodes under reverse bias Park CH, Lee JH
89 - 93	Analytical models for the electric field distributions and breakdown voltage of Triple RESURF SOI LDMOS Hu XR, Zhang B, Luo XR, Li ZJ
94 - 98	Location controlled high performance single-grain Ge TFTs on glass substrate Chen T, Ishihara R, Beenakker K
99 - 103	Charge transport properties in pentacene films: Evaluation of carrier mobility by different techniques Lucas B, El Amrani A, Moliton A, Skaiky A, El Hajj A, Aldissi M
104 - 106	Effect of silicon channel orientation on analog performance of (110) surface pMOSFETs Kang TK