Solid-State Electronics

Solid-State Electronics, Vol.73 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (17 articles)

1 - 6	Effects of metal spikes on leakage current of high-voltage GaN Schottky barrier diode Ha MW, Lee JH, Han MK, Hahn CK
7 - 10	Electrical characteristics of 20-nm junctionless Si nanowire transistors Park CH, Ko MD, Kim KH, Baek RH, Sohn CW, Baek CK, Park S, Deen MJ, Jeong YH, Lee JS
11 - 14	Unipolar resistance switching and abnormal reset behaviors in Pt/CuO/Pt and Cu/CuO/Pt structures Wu L, Li XM, Gao XD, Zheng RK, Zhang F, Liu XJ, Wang Q
15 - 20	Analytical modelling of size effects on the lateral photoresponse of CMOS photodiodes Blanco-Filgueira B, Lopez P, Roldan JB
21 - 26	Physical mechanism of interpoly capacitance reduction in high-voltage stress Habas P, Acovic A, Marjanovic B, Lobet M, Benkais M
27 - 31	Electrical compact modelling of graphene transistors Fregonese S, Meng N, Nguyen HN, Majek C, Maneux C, Happy H, Zimmer T
32 - 36	Light triggered 4H-SiC thyristors with an etched guard ring assisted JTE Dheilly N, Planson D, Pagues G, Scharnholz S
37 - 43	Gain analysis in photonic crystal lasers using modified complex plane-wave expansion method Takigawa S, Noda S
44 - 50	Preparation of transparent ZnO thin films and their application in UV sensor devices Panda SK, Jacob C
51 - 55	Time-dependent device characteristics in InAs/AlSb HEMTs Ho HC, Liu HK, He WZ, Lin HK, Hsin YM
56 - 59	Low equivalent oxide thickness of TiO2/GaAs MOS capacitor Yen CF, Lee MK
60 - 63	Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide Cheng CH, Chen PC, Wu YH, Wu MJ, Yeh FS, Chin A
64 - 73	RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs Martin MJ, Pascual E, Rengel R
74 - 77	Amorphous indium-gallium-zinc oxide thin-film transistors instability and stress evaluation by Stretched-Exponential model Shih TH, Fang SW, Lee JY, Lin GY, Chen YH, Hsin LP, Li HH, Yang CW, Chen CT, Lu HH, Cheng KC, Lin CY, Chen CY, Yang CM, Tsai HT, Lin YH
78 - 80	GaN schottky barrier MOSFET using transparent source/drain electrodes for UV-optoelectronic integration Jung BK, Lee CJ, Kim TH, Kim DS, Lee MB, Lee JH, Hahm SH
81 - 83	The experimental demonstration of the effect similar to electromagnetically induced transparency in the two micro-resonators system Fan GF, Li Y, Han B, Liu XH, Zhen Z
84 - 88	Factors for the polarization lifetime in metal-ferroelectric-insulator-semiconductor capacitors Xiao YG, Xiong Y, Tang MH, Li JC, Gu XC, Cheng CP, Jiang B, Tang ZH, Lv XS, Cai HQ, He J