Solid-State Electronics

Solid-State Electronics, Vol.76 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (24 articles)

1 - 4	Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors Liu QM, Dong L, Liu YQ, Gordon R, Ye PDD, Fay P, Seabaugh A
5 - 7	A differential smoothing technique for the extraction of MOSFET threshold voltage using extrapolation in the linear region Yang HG, Inokawa H
8 - 12	Extending ballistic graphene FET lumped element models to diffusive devices Vincenzi G, Deligeorgis G, Coccetti F, Dragoman M, Pierantoni L, Mencarelli D, Plana R
13 - 18	Characterization of self-heating in Si-Ge HBTs with pulse, DC and AC measurements Sahoo AK, Fregonese S, Weiss M, Grandchamp B, Malbert N, Zimmer T
19 - 24	Explicit model for direct tunneling current in double-gate MOSFETs through a dielectric stack Chaves F, Jimenez D, Sune J
25 - 29	Enhanced performance of organic electroluminescent diodes by UV-ozone treatment of molybdenum trioxide Deng ZB, Lu ZY, Xu DH, Xiao J, Wang YS
30 - 35	Quantitative evaluation of gettering efficiencies in device process after p-well formation Lee SW, Lee SH, Hwang DH, Kang HB
36 - 39	Hard breakdown mechanisms of compensated p-type and n-type single-crystalline silicon solar cells Dubois S, Veirman J, Enjalbert N, Scheiblin P
40 - 43	Effect of annealing temperature on resistance switching behavior of Mg0.2Zn0.8O thin films deposited on ITO glass Gao SM, Wang H, Xu JW, Yuan CL, Zhang XW
44 - 47	Performance improvement of low-temperature a-SiGe:H thin-film transistors Dominguez M, Rosales P, Torres A
48 - 53	Special correlation of photoluminescent peak of porous silicon with its resistivity Verma D, Singh SN, Singh PK, Mehdi SS, Husain M
54 - 59	Improved analysis and modeling of low-frequency noise in nanoscale MOSFETs Ioannidis EG, Dimitriadis CA, Haendler S, Bianchi RA, Jomaah J, Ghibaudo G
60 - 66	A physics based compact model of I-V and C-V characteristics in AlGaN/GaN HEMT devices Khandelwal S, Fjeldly TA
67 - 70	Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe Zhang G, Wu Z, Jeong JH, Jeong DS, Yoo WJ, Cheong BK
71 - 76	Deposition of nanocrystalline thin TiO2 films for MOS capacitors using Sol-Gel spin method with Pt and Al top electrodes Rathee D, Kumar M, Arya SK
77 - 83	Enhanced DC model for GaN HEMT transistors with built-in thermal and trapping effects Birafane A, Aflaki P, Kouki AB, Ghannouchi FM
84 - 90	A highly sensitive methane sensor with nickel alloy microheater on micromachined Si substrate Roy S, Sarkar CK, Bhattacharyya P
91 - 94	Synthesis and ethanol sensing properties of SnO2 nanosheets via a simple hydrothermal route Lou Z, Wang LL, Wang R, Fei T, Zhang T
95 - 100	CIGS formation by high temperature selenization of metal precursors in H2Se atmosphere Liang HF, Avachat U, Liu W, van Duren J, Le M
101 - 103	Efficiency improvements in single-heterojunction organic photovoltaic cells by insertion of wide-bandgap electron-blocking layers Ho CS, Lee CS, Hsu WC, Lin CY, Lai YN, Wang CW
104 - 108	Zinc oxide thin film transistors with Schottky source barriers Ma AM, Gupta M, Chowdhury FR, Shen M, Bothe K, Shankar K, Tsui Y, Barlage DW
109 - 111	A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection Wan J, Cristoloveanu S, Le Royer C, Zaslavsky A
112 - 115	A formula for the central potential's maximum magnitude in arbitrarily doped symmetric double-gate MOSFETs Garcia-Sanchez FJ, Ortiz-Conde A
116 - 118	A single electron bipolar avalanche transistor implemented in 90 nm CMOS Webster EAG, Richardson JA, Grant LA, Henderson RK