1 - 1 |
Untitled Lai CS, Liou JJ, Wang JC |
2 - 6 |
Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics Hsu HW, Huang HS, Chen HW, Cheng CP, Lin KC, Chen SY, Wang MC, Liu CH |
7 - 11 |
Leakage current conduction behaviors of 0.65 nm equivalent-oxide-thickness HfZrLaO gate dielectrics Lin KC, Chen JY, Hsu HW, Chen HW, Liu CH |
12 - 19 |
Statistical device simulation of physical and electrical characteristic fluctuations in 16-nm-gate high-kappa/metal gate MOSFETs in the presence of random discrete dopants and random interface traps Li YM, Cheng HW |
20 - 25 |
Characterizations of polycrystalline silicon nanowire thin-film transistors enhanced by metal-induced lateral crystallization Su CJ, Huang YF, Lin HC, Huang TY |
26 - 30 |
High-performance vertically stacked bottom-gate and top-gate polycrystalline silicon thin-film transistors for three-dimensional integrated circuits Lee IC, Tsai TC, Tsai CC, Yang PY, Wang CL, Cheng HC |
31 - 34 |
Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory Lai CS, Wang JC, Chang LC, Liao YK, Chou PC, Chang WC, Ai CF, Tsai WF |
35 - 40 |
Bipolar resistive switching memory using bilayer TaOx/WOx films Prakash A, Maikap S, Lai CS, Tien TC, Chen WS, Lee HY, Chen FT, Kao MJ, Tsai MJ |
41 - 45 |
Improved endurance in ultrathin Al2O3 film with a reactive Ti layer based resistive memory Chen PS, Chen YS, Lee HY, Liu WS, Gu PY, Chen F, Tsai MJ |
46 - 50 |
Fabrication and characterization of carbon nanotube intermolecular p-n junctions Li H, Zhang Q, Yap CC, Tay BK |
51 - 55 |
Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors Da HX, Lam KT, Samudra GS, Liang GC, Chin SK |
56 - 63 |
A novel thermal switch and variable capacitance implement by CMOS MEMS process approaching in micro electrostatic converter Chiou JC, Chou LC, Lai YL, Huang SC |
64 - 71 |
Design and fabrication of MEMS-based thermally-actuated image stabilizer for cell phone camera Lin CY, Chiou JC |
72 - 76 |
The effects of oxygen annealing on the electrical characteristics of hydrothermally grown zinc oxide thin-film transistors Wang JL, Yang PY, Hsieh TY, Hwang CC, Shye DC, Lee IC |
77 - 81 |
High ESD reliability InGaN light emitting diodes with post deposition annealing treated ZnO films Chang LB, Chang YS, Jeng MJ, Liu KC, Yang JF, Kuo SY, Wu KH |
82 - 86 |
Investigation on the sensitivity of TiO2:Ru pH sensor by Taguchi design of experiment Yang SY, Chen CW, Chou JC |
87 - 92 |
Fabrication of the array chlorine ion sensor based on microfluidic device framework Chou JC, Ye GC, Wu DG, Chen CC |
93 - 100 |
Wireless powering electronics and spiral coils for implant microsystem toward nanomedicine diagnosis and therapy in free-behavior animal Chang CW, Hou KC, Shieh LJ, Hung SH, Chiou JC |
101 - 107 |
Towards a molecular QCA wire: simulation of write-in and read-out systems Pulimeno A, Graziano M, Demarchi D, Piccinini G |