1 - 5 |
Change of effective thermal resistance of LED package according to an input current level Ji PF, Moon CH |
6 - 11 |
Design and modeling of Faraday cages for substrate noise isolation Wu JH, del Alamo JA |
12 - 14 |
"Y function" method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction Diouf C, Cros A, Monfray S, Mitard J, Rosa J, Gloria D, Ghibaudo G |
15 - 22 |
Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances Rahhal L, Bajolet A, Cros A, Diouf C, Kergomard F, Rosa J, Bidal G, Bianchi RA, Ghibaudo G |
23 - 27 |
Refined nano-textured surface coupled with SiNx, layer on the improved photovoltaic properties of multi-crystalline silicon solar cells Shi JW, Xu F, Zhou PH, Yang J, Yang ZB, Chen DS, Yin YF, Chen DD, Ma ZQ |
28 - 35 |
Reliability concern and design for the lateral insulator gate bipolar transistor based on SOI substrate Liu SY, Huang TT, Sun WF, Zhang CW |
36 - 42 |
Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in In GaAs metal-oxide-semiconductor field-effect transistors Kong EYJ, Ivana, Zhang XG, Zhou Q, Pan JS, Zhang Z, Yeo YC |
43 - 47 |
Shot noise in resistively coupled single tunnel junctions Babiker SF |
48 - 53 |
A pragmatic design methodology using proper isolation and doping for bulk FinFETs Liao YB, Chiang MH, Lai YS, Hsu WC |
54 - 58 |
Analytical modeling of flicker noise in DG-FinFETs with multi-layered nitrided high-kappa gate dielectric Pandit S, Sarkar CK |
59 - 63 |
Charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors Cerdeira A, Estrada M, Iniguez B, Trevisoli RD, Doria RT, de Souza M, Pavanello MA |
64 - 73 |
Strain effect analysis on the electrical conductivity of Si/Si1-xGex nanocomposite thin films Li H, Xu Y, Xu Y, Li G |