화학공학소재연구정보센터

Solid-State Electronics

Solid-State Electronics, Vol.85 Entire volume, number list
ISSN: 0038-1101 (Print) 

In this Issue (12 articles)

1 - 5 Change of effective thermal resistance of LED package according to an input current level
Ji PF, Moon CH
6 - 11 Design and modeling of Faraday cages for substrate noise isolation
Wu JH, del Alamo JA
12 - 14 "Y function" method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction
Diouf C, Cros A, Monfray S, Mitard J, Rosa J, Gloria D, Ghibaudo G
15 - 22 Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances
Rahhal L, Bajolet A, Cros A, Diouf C, Kergomard F, Rosa J, Bidal G, Bianchi RA, Ghibaudo G
23 - 27 Refined nano-textured surface coupled with SiNx, layer on the improved photovoltaic properties of multi-crystalline silicon solar cells
Shi JW, Xu F, Zhou PH, Yang J, Yang ZB, Chen DS, Yin YF, Chen DD, Ma ZQ
28 - 35 Reliability concern and design for the lateral insulator gate bipolar transistor based on SOI substrate
Liu SY, Huang TT, Sun WF, Zhang CW
36 - 42 Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in In GaAs metal-oxide-semiconductor field-effect transistors
Kong EYJ, Ivana, Zhang XG, Zhou Q, Pan JS, Zhang Z, Yeo YC
43 - 47 Shot noise in resistively coupled single tunnel junctions
Babiker SF
48 - 53 A pragmatic design methodology using proper isolation and doping for bulk FinFETs
Liao YB, Chiang MH, Lai YS, Hsu WC
54 - 58 Analytical modeling of flicker noise in DG-FinFETs with multi-layered nitrided high-kappa gate dielectric
Pandit S, Sarkar CK
59 - 63 Charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors
Cerdeira A, Estrada M, Iniguez B, Trevisoli RD, Doria RT, de Souza M, Pavanello MA
64 - 73 Strain effect analysis on the electrical conductivity of Si/Si1-xGex nanocomposite thin films
Li H, Xu Y, Xu Y, Li G