Solid-State Electronics
Solid-State Electronics, Vol.88 Entire volume, number list
ISSN: 0038-1101 (Print)
In this Issue (17 articles)
| 1 - 1 |
SELECTED EXTENDED PAPERS FROM ULIS 2012 CONFERENCE Foreword [Anonymous] |
| 2 - 8 |
High mobility CMOS technologies using III-V/Ge channels on Si platform Takagi S, Kim SH, Yokoyama M, Zhang R, Taoka N, Urabe Y, Yasuda T, Yamada H, Ichikawa O, Fukuhara N, Hata M, Takenaka M |
| 9 - 14 |
Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs Sklenard B, Batude P, Rafhay Q, Martin-Bragado I, Xu CQ, Previtali B, Colombeau B, Khaja FA, Cristoloveanu S, Rivallin P, Tavernier C, Poiroux T |
| 15 - 20 |
Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology Fenouillet-Beranger C, Perreau P, Benoist T, Richier C, Haendler S, Pradelle J, Bustos J, Brun P, Tosti L, Weber O, Andrieu F, Orlando B, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gregoire M, Ducote J, Gouraud P, Margain A, Borowiak C, Bianchini R, Planes N, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Boeuf F |
| 21 - 26 |
Investigating doping effects on high-kappa metal gate stack for effective work function engineering Leroux C, Baudot S, Charbonnier M, Van Der Geest A, Caubet P, Toffoli A, Blaise P, Ghibaudo G, Martin F, Reimbold G |
| 27 - 31 |
Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks Flachowsky S, Herrmann T, Hontschel J, Illgen R, Ong SY, Wiatr M |
| 32 - 36 |
Scaling of high-kappa/metal-gate TriGate SOI nanowire transistors down to 10 nm width Coquand R, Barraud S, Casse M, Leroux P, Vizioz C, Comboroure C, Perreau P, Ernst E, Samson MP, Maffini-Alvaro V, Tabone C, Barnola S, Munteanu D, Ghibaudo G, Monfray S, Boeuf F, Poiroux T |
| 37 - 42 |
Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs Negara MA, Djara V, O'Regan TP, Cherkaoui K, Burke M, Gomeniuk YY, Schmidt M, O'Connor E, Povey IM, Quinn AJ, Hurley PK |
| 43 - 48 |
Impact of quantum effects on the short channel effects of III-V nMOSFETs in weak and strong inversion regimes Dutta T, Rafhay Q, Clerc R, Lacord J, Monfray S, Pananakakis G, Boeuf F, Ghibaudo G |
| 49 - 53 |
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs Conzatti F, Pala MG, Esseni D, Bano E |
| 54 - 60 |
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III-V channel materials Revelant A, Palestri P, Osgnach P, Semi L |
| 61 - 64 |
Characteristics control of room-temperature operating single electron transistor with floating gate by charge pump circuit Nozue M, Suzuki R, Nomura H, Saraya T, Hiramoto T |
| 65 - 68 |
Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2 Martin D, Yurchuk E, Muller S, Muller J, Paul J, Sundquist J, Slesazeck S, Schlosser T, van Bentum R, Trentzsch M, Schroder U, Mikolajick T |
| 69 - 72 |
Numerical simulation and modeling of thermal transient in silicon power devices Magnone P, Fiegna C, Greco G, Bazzano G, Rinaudo S, Sangiorgi E |
| 73 - 81 |
Surface potential compact model for embedded flash devices oriented to IC memory design Garetto D, Rideau D, Gilibert F, Schmid A, Jaouen H, Leblebici Y |
| 82 - 88 |
Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements Pittino F, Selmi L, Widdershoven F |
| 89 - 94 |
Pressure sensors based on suspended graphene membranes Smith AD, Vaziri S, Niklaus F, Fischer AC, Sterner M, Delin A, Ostling M, Lemme MC |