| 1 - 7 |
Physical insights of body effect and charge degradation in floating-body DRAMs
Giusi G |
| 8 - 14 |
Self-heating in semiconductors: A comparative study
Freeman JC |
| 15 - 18 |
Effects of thermal treatment on radiative properties of HVPE grown InP layers
Luryi S, Semyonov O, Subashiev A, Abeles J, Chan W, Shellenbarger Z, Metaferia W, Lourdudoss S |
| 19 - 22 |
Pseudo-Boltzmann model for modeling the junctionless transistors
Avila-Herrera F, Cerdeira A, Roldan JB, Sanchez-Moreno P, Tienda-Luna IM, Iniguez B |
| 23 - 27 |
Effect of electrode microstructure on the sensitivity and response time of potentiometric NOx sensors based on stabilized-zirconia and La5/3Sr1/3NiO4-YSZ sensing electrode
Chen Y, Xia F, Xiao JZ |
| 28 - 31 |
Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5 mu m down to 20 nm
Ioannidis EG, Haendler S, Theodorou CG, Lasserre S, Dimitriadis CA, Ghibaudo G |
| 32 - 35 |
The influence of channel layer thickness on the electrical properties of ZnO TFTs
Li G, Xie D, Feng TT, Xu JL, Zhang XW, Ren TL |
| 36 - 41 |
Field controlled RF Graphene FETs with improved high frequency performance
Al-Amin C, Karabiyik M, Vabbina PK, Sinha R, Pala N |
| 42 - 45 |
Normally-off dual gate AlGaN/GaN MISFET with selective area-recessed floating gate
Ahn HK, Kim ZS, Bae SB, Kim HC, Kang DM, Kim SI, Lee JM, Min BG, Yoon HS, Lim JW, Kwon YH, Nam ES, Park HM, Kim HS, Lee JH |
| 46 - 51 |
A physics-based scheme for potentials of a-Si: H TFT with symmetric dual gate considering deep Gaussian DOS distribution
Qin J, Yao RH |
| 52 - 60 |
A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) UTB SOI MOSFETs including substrate induced surface potential effectsd
Kumar A, Tiwari PK |
